Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
We present an experimental and theoretical study of the size dependence of the coupling between electron-hole pairs and longitudinal-optical phonons in Ga1-xInxN/GaN-based quantum wells and quantum boxes. We found that the Huang-Rhys factor S, which determ ...
A quantum theory of quantum well polaritons in semiconductor microcavities is developed. The model takes into account the coupling between the exciton level and the structured continuum of electromagnetic modes relative to the particular geometry of the mi ...
We have studied experimentally the radiative lifetimes of negatively charged excitons (X-) and neutral excitons (X) in GaAs and CdTe quantum wells. Despite the different optical properties (e.g. trion binding energies) and the different quantum well struct ...
Time-resolved up-conversion measurements of secondary emission from multiple quantum wells under resonant femtosecond excitation are reported for GaAs multiple quantum wells with qualitatively different interface disorder. The transient resonant Rayleigh s ...
Multicolor, multi-quantum well light emitting diodes have been fabricated by molecular beam epitaxy by inserting quantum wells of various widths in the active region. The In content of the wells is 15%-20% and the color is governed by carrier confinement a ...
Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike stat ...