Comparison of two optimized readout chains for low light CIS
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Lithography on (100) single-crystal silicon and amorphous silicon is performed by electric-field-enhanced local oxidation of silicon using an atomic force microscope (AFM). Amorphous silicon is used as a negative resist to pattern silicon oxide, silicon ni ...
The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V ...
The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the authors ...
When silicon thin films are deposited by plasma enhanced chemical vapour deposition in a plasma regime close to that of the formation of powder, a new type of material, called polymorphous silicon (pm-Si), is obtained. We present here the optoelectronic an ...
This paper presents a comparative study of surface micromachined structures fabricated in three different materials, using torsional micromirrors as test vehicle. The devices are realized in single-crystal silicon, polycrystalline silicon and aluminum. Mec ...
Heterojunction with intrinsic thin layer or HIT solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon techn ...
In the frame of this thesis, two similar high current DC arc (HCDCA) plasma sources were investigated in a low gas pressure regime (10-3-10-2 mbar). One of them was initially designed for the epitaxial growth of silicon and silicon germanium (LEP), the oth ...