Ultrafast Optical Control of the Electronic Properties of ZrTe5
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Selective photoluminescence experiments have been used to analyse the neutral donor bound exciton spectra in n type wurtzite GaN epitaxial layers deposited on 6H-SiC, Al2O3 and GaN substrates, In heterostructure layers, the existence of residual strain dis ...
We present a method for obtaining well-localized Wannier-like functions (WF's) for energy bands that are attached to or mixed with other bands. The present scheme removes the limitation of the usual maximally localized WF's method [N. Marzari and D. Vander ...
The effect of the excitation wavelength on the charge recombination (CR) dynamics of several donor−acceptor complexes (DACs) composed of benzene derivatives as donors and of tetracyanoethylene or pyromellitic dianhydride as acceptors has been investigated ...
We have combined large-scale, Gamma-point electronic-structure calculations with the maximally localized Wannier functions approach to calculate efficiently the band structure and the quantum conductance of complex systems containing thousands of atoms whi ...
The subject of this thesis is the growth and analysis of high temperature superconductor (HTSC) films and the study of their electronic structure and properties. In particular, the effect of epitaxial strain is investigated, predominantly by means of in-si ...
Band-structure (BS) calculations of the density of states (DOS) using the full potential augmented plane waves code WIEN97 were performed on the four single-valence vanadium oxides VO, V2O3, VO2 and V2O5. The DOS are discussed with respect to the distortio ...
Magnetotransport measurements in large diameter multiwall carbon nanotubes (20–40 nm) demonstrate the competition of a magnetic-field dependent bandstructure and Altshuler–Aronov–Spivak oscillations. By means of an efficient capacitive coupling to a backga ...
We report on the low-frequency electronic noise properties of individual multi-walled carbon nanotubes (CNTs). We present experimental evidence of the key role played by the structural quality of the tube and its gaseous environment on the excess noise lev ...
We analyze the electronic properties of quantum wires with a Z-like profile within four-band models for the valence band of a semiconductor of diamond and zinc blende type. Group-theoretical considerations show that the valence-band structure is doubly deg ...
We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density s ...