Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories
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The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
We will describe the role of holographic memory in a current research effort(1) that seeks to combine various advanced technologies to achieve petaflops scale computing within the next decade. In addition to holographic memory, the petaflop architecture co ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa1998
Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of ...
Non volatile flash memories based on nanoparticles are one of the possible routes to further downscaling of CMOS technology. The increase of scale integration should involve some new features for memory cells such as Coulomb blockade and quantized charging ...
The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of La ...