Doping Evolution and Junction Formation in Stacked Cyanine Dye Light-Emitting Electrochemical Cells
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This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model o ...
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
A sustainable route to store the energy provided by the Sun, is to directly convert sunlight into molecular hydrogen using a semiconductor performing water photolysis. Hematite (α-Fe2O3) is promising for this application due to its ample abundance, chemica ...
PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...
This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...
Institute of Electrical and Electronics Engineers2010
In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...
The stability of oxygen vacancies across the Ge-HfO2 interface is studied through semilocal and hybrid density-functional calculations. On the semiconductor side, the formation energies are obtained for substoichiometric GeOx of varying x through the use o ...
The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielec ...