Doping Evolution and Junction Formation in Stacked Cyanine Dye Light-Emitting Electrochemical Cells
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we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
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Bismuth titanate (Bi4Ti3O12) shows promise in piezoelectric applications in a temperature range (300-600 °C) which is not well served by standard piezoelectric ceramics. The proposal to use bismuth titanate ceramics for these applications has a major flaw, ...
The paper reports on the effects of Gamma radiation to single-photon avalanche diodes (SPADs). To the best of our knowledge, this is the first study ever conducted on SPADs fabricated in CMOS technology. A typical CMOS SPAD consists of a pn junction revers ...
Reasonable consistency between experimental data for the ambipolar diffusion length and experimental data for the photoconductivity is demonstrated for steady-state measurements performed on a-Si:H layers. This consistency is obtained based on the ''standa ...
On selected GaAs laser diodes, prepared by an epitaxial solution growth method, the temperature dependence of threshold current density and the net density gradient at the p-n junction have been measured. The relationship between these two parameters has b ...
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