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Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Publications associées (56)

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P-type InGaN across the entire alloy composition range

Esther Alarcon Llado

A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into InxGa1-xN (0.1

Amer Inst Physics2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Ferroelectric tunnel fet switch and memory

Mihai Adrian Ionescu

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junct ...

2013

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Mg doping for p-type AlInN lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Antonino Francesco Castiglia

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

American Institute of Physics2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Tunneling magnetoresistance with sign inversion in junctions based on iron oxide nanocrystal superlattices

Raffaella Buonsanti

Magnetic tunnel junctions sandwiching a superlattice thin film of Fe oxide nanocrystals (NCs) were investigated. The transport was found to be controlled by Coulomb blockade and single-electron tunneling, already at room temp. A good correlation was identi ...

2011

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Luca Alex Milo Sulmoni

We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectivel ...

2011

Optical bistability in InGaN-based multisection laser diodes

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Luca Alex Milo Sulmoni

Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...

2011