A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into InxGa1-xN (0.1
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao
Thomas Fjord Kjaersgaard Weatherley
Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh