Characterization and Optimization of Silicon Nitride Thin Films
Publications associées (52)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Multi-element oxynitrides of type Al-Cr-Si-O-N were prepared using r.f. magnetron sputtering from Al80Cr2.5Si17.5 (at.%) target composition and O-2/(O-2+N-2) gas flow ratio between 0 and 100%. Two series of samples varying from pure nitrides to pure oxides ...
Nanowire superconducting single photon detectors (SSPDs) [1] are characterized by very high sensitivity in the near infrared (detection efficiency η up to 30%, for a dark count rate DK of few Hz), speed (up to ∼1 GHz repetition rate) and time resolution (j ...
We analyzed along this work the feasibility to produce high quality alumina thin films by High Vacuum Chemical Vapor Deposition (HV-CVD). We study the influence of various parameters on the growth process and on the film quality, such as substrate temperat ...
Erbium-doped amorphous aluminum oxide layers deposited on Si or oxidized silicon substrates are promising construction pieces for future monolytic integrated optoelectronics devices. In a novel high-vacuum chemical vapor deposition setup the alumina films ...
(001)-textured AIN thin films as needed for longitudinal bulk acoustic wave (BAW) devices exhibit large mechanical stress variations and large orientation variation as a function of growth substrate properties. We prepared thin silicon and silicon dioxide ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008
DC reactive magnetron sputtering was used for the deposition of Zr–Si–N thin films. Four series of samples have been deposited at various substrate temperatures TS: 300 K, 510 K, 710 K and 910 K. Depending on TS, different N2 partial pressures pN2 were req ...
Cohesive and adhesive properties of silicon oxide barrier coatings deposited from an oxygen/hexamethyldisiloxane gas mixture by plasma enhanced chemical vapor deposition, with controlled incorporation of carbon on 12 mm thick polyethylene terephtalate film ...
Multilayered niobium oxynitride films were deposited onto (100) Si using DC magnetron sputtering with a reactive gas pulsing process. The argon and nitrogen flows were kept constant during sputtering of a pure niobium target and the oxygen flow was pulsed ...
Intrinsic, thermal, and hygroscopic contributions to the in-plane residual stress in silicon nitride films on polyimide substrates are identified, based on iso- hygric thermal ramps and isothermal relative humidity jumps, combined with non-linear elastic m ...
We present a MEMS process for the fabrication of arbitrary (adaptable to specific aperture geometries) stabilization of silicon nitride membranes to be used as miniature shadow masks or (nano) stencils. Stabilization was realized by the fabrication of sili ...