Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
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We present the results of high magnetic field (up to 30 T) and temperature (50 mK-80 K) dependent transport measurements on a 2DEG in GaN/AlGaN heterojunctions. A high mobility (above 60000 cm(2) V-1 s(-1) at 4 K) 2DEG was obtained by MBE growth of disloca ...
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in ...
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Al0.1Ga0.9N(5nm)/GaN(2nm) and In0.2Ga0.8N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which comb ...
We investigate both theoretically and experimentally the effects of the In surface segregation in InGaN/GaN quantum wells (QWs). It is shown that this phenomenon induces a blue-shift of the QW photoluminescence (PL) energy, which does not depend on the QW ...
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