Peptide-Enhanced Selective Surface Deposition of Polymer-Based Fragrance Delivery Systems
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Nitrogen additions as NH4NO3 corresponding to 0 (N0), 1 (N1), 3 (N3) and 10 (N10) g N m(-2) yr(-1) were made to Sphagnum magellanicum cores at two-week intervals in situ at four sites across Europe, i.e. Lakkasuo (Finland), Mannikjarve (Estonia), Moidach M ...
GaN and AlxGa1-xN alloys were grown by gas sourer molecular beam epitaxy using NH3. High quality GaN layers with smooth surfaces being obtained, reflection high-energy electron diffraction (RHEED) can be used to monitor the growth. The oscillations of the ...
We study the deposition of Ag ions, and size selected Ag/sub 7/ and Ag/sub 19/ cluster ions on Pd(100) at total kinetic energies of 20 eV and 95 eV using thermal energy atom scattering and molecular dynamics simulations. We find that at all energies Ag ato ...
We study the deposition and the very first steps of nucleation and growth of Ag on Pd(100) with thermal energy atom scattering. This technique is a very sensitive and nonperturbing probe to surface point defects, which permits an in situ and in-time monito ...
Variable-temperature scanning tunneling microscopy was used to study the effect of kinetic cluster energy and rare-gas buffer layers on the deposition process of size-selected silver nanoclusters on a platinum(111) surface. Clusters with impact energies of ...
Measurements of anions and cations are reported for hydrocarbon and silane radio frequency capacitive glow discharges. Series of anions were observed by quadrupole mass spectrometry using power-modulated plasmas, and their structures are interpreted from t ...
The low energy part of proton induced SBD spectra have higher number of counts than expected from p+Si reactions. This is the case for all proton incident angles but the effect increases when approaching grazing angles. The effect is shown to be mainly due ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
It is now generally recognized that the excitation frequency is an important parameter in radio-frequency (rf) plasma-assisted deposition. Very-high-frequency (VHF) silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...