A 2.4-GHz low complexity polar transmitter using dynamic biasing for IEEE 802.15.6
Publications associées (35)
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A 4 GHz, 100 kb/s FM-UWB transceiver for short-range communications in a body area network is presented. Two receivers and a transmitter use the same RF port with a fully-integrated matching network. The first receiver provides multi-user communication cap ...
This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...
Institute of Electrical and Electronics Engineers2017
The main objective of this project is to implement a power amplifier that can be used to drive a shapememory alloy (SMA) currently being developed by Ms. Marjan Ghorbani. The secondary objective is to make the device versatile enough such that other resear ...
This paper proposes a 2.2 noise efficiency factor (NEF) instrumentation amplifier for neural recording applications. A parametric amplifier based on the MOS C-V characteristic is designed as a pre-amplifier stage, lowering the input referred noise of the f ...
This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-en ...
This paper presents a low power successive approximation register (SAR) ADC and its front-end automatic gain control (AGC) amplifier designed in 65nm CMOS technology. Digitally controlled variable gain amplifier (VGA) in AGC loop is used to maximize the dy ...
We present an all-digital application specific integrated circuit (ASIC) that implements Bluetooth Low Energy (BLE)-compatible backscatter communication. The ASIC was fabricated in a 65 nm CMOS process and occupies an active area of 0.12 mm(2) while consum ...
This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...
The crowdedness of the RF spectrum constitutes problems in communication, however it also accommodates large amount of useful information. This information can be used to determine existing signals and operating contexts. However, spectrum condition varies ...