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Unified rule based correction for corners in proximity lithography mask using high resolution features

Publications associées (56)

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Limitations of Proximity Lithography Printing

Krishnaparvathy Puthankovilakam

Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is also known as optical lithography since it uses light to transfer the pattern. The main exposure techniques exist in the industry are projection printing, ...

EPFL2017

Intensity and phase fields behind phase-shifting masks studied with high-resolution interference microscopy

Hans Peter Herzig, Toralf Scharf, Myun Sik Kim, Ali Naqavi, Krishnaparvathy Puthankovilakam

We try to find out the details of how light fields behind the structures of photomasks develop in order to determine the best conditions and designs for proximity printing. The parameters that we use approach real situations like structure printing at prox ...

SPIE-Intl Soc Optical Eng2016

Coherence management in lithography printing systems

Hans Peter Herzig, Toralf Scharf, Johana Bernasconi

In proximity lithography, interference and diffraction effects arise when printing small features because of the proximity gap. Different techniques are used in order to control and take advantage of theses effects. In this paper, the focus is set on the M ...

Spie-Int Soc Optical Engineering2016

Panel: Looking Backwards and Forwards

Giovanni De Micheli

Ten years ago, at 90 nanometers, EDA was challenged and deemed inadequate in dealing with increasing complexity, power consumption, and sub-wavelength lithography, thus harming the progress of mobile phones. Today, at 10 nanometers, integration capacity ha ...

IEEE2016

Lightfields behind amplitude masks Creating phase discontinuities

Hans Peter Herzig, Toralf Scharf, Wilfried Noell, Myun Sik Kim, Krishnaparvathy Puthankovilakam

Shaping of light fields behind amplitude and phase masks the basis the lithographic structure reproduction. The aerial image or better the intensity distribution defines the resolution of the structure to be printed. Contrast is the main parameter and to a ...

Ieee2016

Shaping intensity behind amplitude masks for proximity correction lithography: Design, measurement and realization

Hans Peter Herzig, Toralf Scharf, Qing Tan, David Nguyen, Krishnaparvathy Puthankovilakam

Proximity exposure techniques in lithography are getting more and more popular because of the cost of ownership advantage of mask aligners compared to projection systems. In this paper a gap between simulation and the final result, the prints will be close ...

Spie-Int Soc Optical Engineering2014

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We have experimentally studied the variation in electrical resistance of flexible platinum lines patterned on polyimide foil when they are subjected to circular bending constraints. The lines were patterned by means of standard photolithography and sputter ...

Elsevier2014

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The present work shows the fabrication of a printed RFID label using large-area printing processes, such as roto-screen and stencil printing, and the integration with advanced assembly methods of CMOS-based humidity and temperature sensors. The fabrication ...

2014

Beating Shapes Relying on Moire Level Lines

Roger Hersch, Sylvain Chosson

We consider the problem of obtaining a recognizable shape as superposition moire of two line gratings. The method we propose generates moire lines located between the shape foreground and background centers and the shape boundaries. Upon relative displacem ...

Association for Computing Machinery2014

Application of stencil masks for ion beam lithographic patterning

Jürgen Brugger, Andreea Veronica Savu

The application of Au/Si3N4 stencil masks for the transfer of patterns using different MeV-ion beams with various substrates has been investigated. The techniques investigated were namely, conventional lithography with positive- and negative-tone resist po ...

Elsevier2013