Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz
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A low power 2.4-GHz receiver exploiting the intrinsic high quality factor (Q) of Bulk Acoustic Wave (BAW) resonators is presented. A novel way of performing simple integer division of the BAW digitally controlled oscillator (DCO) signal to address multi-ch ...
The dielectric, electrical and structural properties of (1-x) (0.94Bi(1/2)Na(1/2)TiO(3)-0.06BaTiO(3))-xK(0.5)Na(0.5)NbO(3) (BNT-BT-xKNN) with x=0.09, 0.12, 0.15, and 0.18 were investigated as potential candidates for high-temperature capacitors with a work ...
In this paper, we report the basic design conditions and the experimental confirmation of a temperature dependent negative capacitance (NC) effect in a ferroelectric field-effect-transistor (Fe-FET). We find that the internal voltage amplification peaks of ...
This paper presents a preliminary work on the feeding of an AC dipole using a resonant circuit with a varying resonant frequency. A single phase LC oscillator containing a variable capacitor is fed by a wide band amplifier or a voltage source inverter. For ...
Institute of Electrical and Electronics Engineers2011
FAIMS's ion separation mechanism is based on analyte's characteristic nonlinear relationship between its ion mobility and applied electric field strength. Present characterization methods for this nonlinear relationship are based on precarious assumptions ...
The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...
We present a fully integrated detector suitable for active tracking of interventional devices in MR-guided interventions. The single-chip microsystem consists of a detection coil, a tuning capacitor, an intermediate frequency downconversion receiver, and a ...
In recent years, bulk acoustic wave resonators (BAW) in combination with RF circuits have shown a big potential in achieving the low-power consumption and miniaturization level required to address wireless sensor nodes (WSN) applications. A lot of work has ...
The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...
Integrated Hall devices have the great advantage, over other magnetic sensors, that they can be fully fabricated by a standard CMOS process. However they are known to have a relatively large offset (i.e. residual voltage at zero magnetic field). Techniques ...