One Transistor Active Pixel Sensor with Tunnel FET
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This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...
The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...
Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...
Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. Th ...
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
