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This thesis presents our studies on nanostructures growth and magnetism, mainly based on scanning tunneling microscopy (STM), magneto-optical Kerr effect (MOKE), and x-ray magnetic circular dichroism (XMCD) measurements. In most of these experiments, nanos ...
We have studied the properties of Mg-doped GaN epilayers grown by molecular beam epitaxy (MBE) with ammonia as nitrogen source. GaN p-n homojunctions has been developed to determine the optoelectronic characteristics of the junctions as a function of the p ...
The aim of this thesis is to understand the dynamics of the growth of catalyst-free III-V semiconductor nanostructures on silicon substrates, focusing the attention mainly on the early stages of growths. A detailed understanding of this first phase of the ...
We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed pho ...
Studying and understanding the conditions under which organic semiconductors can be engineered to form aligned single crystals in thin films is of primary importance owing to their unique orientation-dependent optoelectronic properties. Efforts to reach th ...
Submonolayer epitaxial growth is obtained by the deposition of less than a complete layer of atoms on a single crystal surface. It is of fundamental interest for industrial applications (e.g. in the semiconductor industry) as well as from the point of view ...
The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AIN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrate is reported. Optimized-growth conditions lead to a significant d ...
The microstructure of ferroelectric Cd1−xZnxTe (CZT) thin films with x ≈ 0.04 grown by molecular beam epitaxy has been studied by means of cross sectional high-resolution transmission electron microscopy (HREM). High- density {1 1 1} lamellar twins are fou ...
Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. H ...
The continued drive for increased efficiency, performance and reduced costs for aircraft and industrial gas turbines demands extended use of high temperature materials, such as single crystal nickel based superalloys. The cost for hot section components us ...
