Impact of organic overlayers on a-Si:H/c-Si surface potential
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Doped hydrogenated amorphous silicon a-Si:H films of only a few nanometer thin find application in a-Si:H/crystalline silicon heterojunction solar cells. Although such films may yield a field effect at the interface, their electronic passivation properties ...
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The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...
The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the authors ...
Reasonable consistency between experimental data for the ambipolar diffusion length and experimental data for the photoconductivity is demonstrated for steady-state measurements performed on a-Si:H layers. This consistency is obtained based on the ''standa ...
The concepts of lifetime and relaxation semiconductors introduced by van Roosbroeck and Casey are reconsidered for amorphous semiconductors and the effect of localized states on the lifetime/relaxation criterion specified: The quantity to be considered is ...
For pt.II see ibid. vol.73, p.7690 (1993). In order to investigate the interface between polycrystalline-silicon (poly-Si) and crystalline silicon (c-Si), which is of crucial importance for the passivation of high-voltage devices, an infrared diagnostic me ...
We report on the structural and electronic interface formation between ITO (indium-tin-oxide) and prototypical organic small molecular semiconductors, i.e., CuPc (copper phthalocyanine) and alpha-NPD (N,N'-di(naphtalen-1-yl)-N,N'-diphenyl-benzidine). In pa ...
