Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays
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Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. Th ...
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...
In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control of doors and windows, electric chair adjustment, air conditioning etc. The 12V battery used in the pr ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...
This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs (field effect transistors) based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: on ...
In this work, a detailed analysis of capacitance behavior of high voltage MOSFET (HV-MOS) e.g. LDMOS, VDMOS using device simulation is made. The impact of lateral non-uniform doping and drift region is separately analyzed. It is shown that the peaks in C-G ...
This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devi ...
A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS ...
The influences of trapped charges on carrier transport in carbon nanotubes (CNTs) are studied using CNT field-effect transistors with a partial top-gate and a global back-gate. Trapped charges induced by the global back-gate voltage sweeping (+/- 20 V) pro ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...
