Single photon detector and associated methods for making the same
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In this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as similar to270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by b ...
An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...
Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ...
An entire microsystem for high accuracy magnetic field measurement based on vertical Hall devices has been simulated. In accordance with existing knowledge about semiconductor physics and experimental results, a functional SPICE- model for a vertical Hall ...
An electromagnetic wave detector formed of semiconductor materials includes at least one quantum well in which there is provided a fine layer of a material with a gap width that is smaller than that of the quantum well layer. For example, in the case of a ...
The main fields of applications are today especially broadcast amplifiers and fast power-supplies for plasma physics or neutral Beam Injection. The fisrst interests on the proposed technique is the series connected step inverter stages, which represents a ...
Theor. models for the action spectrum and the current-voltage characteristics of microporous (colloidal) semiconductor films in photoelectrochem. cells were derived. The derivation is based on the assumptions that the charge carrier transport in the semico ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...