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There once was a harsh competition between different computer memory technologies, and now we cheer triumph for the Random Access-Memory (RAM) devices, -- cheap, fast, tiny, stable. The competing Magnetic Bubble Memory had faded away as magnetic bubbles ar ...
Multiferroic materials show, in a single phase, at least two ferroic properties. The latter are are (anti-)ferroelectricity, (anti-)ferromagnetism or (anti-)ferroelasticity. Interesting applications can use the properties of multiferroics, especially with ...
In the modern digital era of big data applications, there is an ever-increasing demand for higher memory capacity that is both reliable and cost effective. In the domain of non-volatile memory systems, Flash-based storage devices have dominated the consume ...
Machine Learning (ML) is an attractive application of Non-Volatile Memory (NVM) arrays [1,2]. However, achieving speedup over GPUs will require minimal neuron circuit sharing and thus highly area-efficient peripheral circuitry, so that ML reads and writes ...
At CERN, the circulating beam current measurement is provided by two types of transformers, the DC Current Transformer (DCCT) and the Fast Beam Current Transformer (FBCT). Each transformer is built based on toroidal cores made from a magnetic material. Dep ...
Nanoparticles promise a variety of application in energy, medicine, and biology. However, most nanoparticlesâ material composition and shape cannot be tuned and so functions have thus far been limited. Moreover they are often also chemically unstable in ...
A storage device stores data in groups of memory cells using vectors corresponding to voltage code codewords, each codeword having k entries. Entries have values selected from a set of at least three entry values and 2.sup.n distinct inputs can be encoded ...
This work reports a comparison of high-k AbO(3)/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as l ...
The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...
Antiferroelectric lead zirconate is the key ingredient in modern ferroelectric and piezoelectric functional solid solutions. By itself it offers opportunities in new-type non-volatile memory and energy storage applications. A highly useful and scientifical ...
