Publication

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

Publications associées (75)

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Silicon microcantilevers with MOSFET detection

Luis Guillermo Villanueva Torrijo

We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have bee ...

2010

Realization of the Conscience Mechanism in CMOS Implementation of Winner-Takes-All Self-Organizing Neural Networks

Rafal Tomasz Dlugosz

This paper presents a complementary metal–oxide– semiconductor (CMOS) implementation of a conscience mechanism used to improve the effectiveness of learning in the winnertakes- all (WTA) artificial neural networks (ANNs) realized at the transistor level. T ...

Institute of Electrical and Electronics Engineers2010

Weak Inversion for Ultra Low-Power and Very Low-Voltage Circuits

Eric Vittoz

This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called subthreshold mode. In analog circuits, w.i. is reached at very low current, but it is als ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

New approach for SOI pixel sensor

Louis Harik

Silicon on Insulator (SOI) is an interesting alternative to bulk silicon for the fabrication of integrated circuits due to its advantages with respect to the junction leakage, low switching noise coupling, high temperature immunity, low voltage and low pow ...

EPFL2009

SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

Maher Kayal, Jean-Michel Sallese, Louis Harik

Standard techniques used for measuring the photocurrent of an SOI phototransistor have failed due to two main reasons: the first being the low signal-to-noise ratio and the second being the slow transient. In this paper, the partially depleted silicon on i ...

Institute of Electrical and Electronics Engineers2009

Silicon microcantilevers with MOSFET detection

Luis Guillermo Villanueva Torrijo

2009

Design of Compact Imperfection-Immune CNFET Layouts for Standard-Cell-Based Logic Synthesis

Giovanni De Micheli, David Atienza Alonso, Shashi Kanth Bobba, Jie Zhang

The quest for technologies with superior device characteristics has showcased Carbon Nanotube Field Effect Transistors (CNFETs) into limelight. Among the several design aspects necessary for today’s grail in CNFET technology, achieving functional immunity ...

2009

MOS current-mode logic standard cells for high-speed low-noise applications

Stéphane Badel

With the continuous shrinking of devices dimensions in microelectronic circuits, it is becoming extremely desirable to integrate analog circuitry together with complex digital logic blocks. The noise generated by the digital parts in a mixed-signal integra ...

EPFL2008

Counting single electrons in a CMOS circuit

Radivoje Popovic, Marc Lany

We describe a device compatible with CMOS technology, which permits to detect a single charge by multiplying it to an easily measurable level. The device is a bipolar transistor optimized for the operation in the Geiger avalanche mode. A single electron, i ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Noise and small-signal modeling of nanoscale MOSFETs

Ananda Sankar Roy

After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...

EPFL2007