Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs
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The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
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