A Time-Resolved Photophysical Study of Hybrid Organic-Inorganic Perovskite Photovoltaic Materials

The search for new photovoltaic materials has been driven by the combined need to exploit sources of energy that are clean and sustainable, while simultaneously doing it in a cost effective manner. In this light, hybrid organic-inorganic perovskites have recently emerged as an extremely promising photonic material, and their application as a functional photovoltaic layer has resulted in device efficiencies that rival long established silicon based technologies. Rapid progress in device efficiencies have occurred over the last years (22.1% being the current record). However, the simultaneous growth in basic studies of the material have not resulted in a conclusive understanding of the fundamental process that occur subsequent to photoexcitation. Hence, there is a pressing need to identify the pathways that currently limit device performance and provide direction for future work in materials and device engineering. Towards this goal, we investigate two perovskite compositions (CH3NH3PbI3 and (FAPbI3)0.85(MAPbBr3)0.15) using time-resolved (THz and electroabsorption) spectroscopic techniques. Chapter 1 and 2 provide a general introduction into the investigated system and the experimental techniques that have been used. In chapter 3, we detail time-resolved THz measurements and report on experimental evidence for carrier recombination through an indirect transition, as well as a direct recombination pathway that is present at higher carrier densities. We calculate temperature dependent carrier mobilities (at THz frequencies) and bimolecular recombination constants. Through which we identify phonon scattering as the primary limiting mechanism for carrier transport, and temperature dependent bimolecular recombination that is mediated by the relative mobility of the charge carriers. Analysis of the complex photoconductivity spectra using the Drude-Smith model revealed a large difference in carrier scattering between the two perovskite films that could be attributed to the significantly different morphologies. In chapter 4 we apply time-resolved electroabsorption spectroscopy (TREAS) to insulated CH3NH3PbI3 layers and investigate the macroscopic carrier transport dynamics under applied electric fields. Transport within the 40nm perovskite grain was discovered to be diminished by a factor ¿ 2 relative to the high frequency mobility obtained through THz spectroscopy. The averaged carrier mobility across the 280nm film length was reduced by a factor ¿ 4, due to the presence of grain boundaries and defects. Preliminary investigations also identified spectral signatures associated with carrier accumulation at the perovskite interface and delayed extraction at the contacts. Chapter 5 deals with complete solar cells formed using (FAPbI3)0.85(MAPbBr3)0.15 as the active layer and we report the first application of the TREAS technique to complete perovskite devices. Our results reveal that the improved morphology of the film results in film averaged mobilities that are near the intrinsic values obtained using THz spectroscopy. Analysis of transient absorption spectra revealed an electroabsorption signature, its dynamics can be correlated with the disassociation of a transient excitonic species to form free charge carriers.

Approches numériques du transport de charges dans les semiconducteurs organiques

Hocine Houili

Using plastics or dyes like molecular semiconductors to make optoelectronic devices at low cost is a project in industry that is of great interest to the "Information Community" of this beginning of the 21st century. Some applications of this technology have already been realized including flexible flat-panel displays made with organic light-emitting diodes, organic transistors for active matrices, organic solar cells and sensors. In all these applications it is essential to deduce and understand the laws that determine the charge transport and the light emission in these materials. The goal of this thesis is to contribute to the theoretical models that describe these transport processes. In order to predict the behaviour of charge carriers in a given device, one can choose two methods. One can either numerically solve the master equations that describe the general behaviour of charges and currents in each part of the device, or one can simulate the detailed behaviour of each charge in the device by fixing the conditions of its movement using a procedure known as "Monte Carlo". In this thesis I addressed the two approaches. I have been interested successively in the prediction of the electric properties of multilayer light-emitting devices, considered as a whole. Then I was able to understand in detail the processes accruing at the organic-organic interfaces by using the Monte Carlo method. My last project involved the study of the channel of an organic transistor. In each one of these cases I took account of the characteristic features of small molecule organic materials in order to develop models for charge transport for the study and optimization of two important types of organic devices : organic light-emitting diodes and field-effect transistors. Amorphous organic semiconductors are mainly used for the fabrication of organic diodes. They are characterized by an energetically disordered density of states that is assumed to be Gaussian. The transport of charges in these materials occurs via hopping from one molecule to another in this density of states. The correlations between the energies of the molecular sites have important effects on transport ; the dependence of mobility on the applied electric field in particular. If the energetic disorder is due to the random orientations of the permanent dipoles of the molecules, then the correlations between the orientations of these dipoles can profoundly change the spatial configuration of the energetic disorder and consequently the charge transport. Due to the fact that organic diodes often comprise of multiple organic layers, understanding device behaviour at the organic-organic interfaces is of critical importance. Electrons and holes accumulate close to these interfaces and they are therefore more likely to recombine and emit light. The Coulomb interactions between the charge carriers and the energy disorder are at the origin of complex processes taking place at these accumulation regions. I studied these processes through a 3D multi-particle Monte Carlo simulation. The short-range Coulomb repulsion forbids the double-occupancy of the sites and shifts the energy level for injection of carriers across the interface upward, thus increasing the electric current of the diode. The long-range Coulomb interactions increase the electric field and the current at the interface although this increase is less important than suggested by 1D models. Effects related to the hopping process such as the effect of the exact form of the hopping law and backward or return hop at the interface are clearly discussed. The Monte Carlo simulations are cross-compared with an analytical model for hopping transport across the interface. This comparison made it possible to understand other aspects of the physical processes at organic-organic interface and supports the Monte Carlo simulations. The study of the electron-hole recombination showed a decrease of the cross-section with an increase of the applied electric field, but this decrease is less than what can be expected by the classical Langevin theory. In spite of their efficiency, Monte Carlo simulations are not attractive when modelling complex multi-layer diodes. The 1D models are better suited in this case. A 1D model called MOLED, which was developed at Laboratoire d'Optoélectronique des Matériaux Moléculaires (LOMM) for the simulation of the organic diodes, is used and described in detail in this thesis. We used MOLED to explore the effect of the energy correlations on the electric field dependence of the mobility. In fact we simulated the time-of-flight experiment, a common method used to determine of the carrier mobility. The crystalline organic semiconductors achieve mobility performances close or even better than amorphous silicon. Their use for the fabrication of field-effect transistors is thus a good choice. The models for charge transport in crystalline organic materials differ much from their counterparts for amorphous organic materials. Indeed band models are more appropriate to describe charge transport in crystalline organic materials. However it is very important to take into account the effects of electronic polarization in these models. I developed a method of calculation of these effects of polarization in the bulk of the organic semiconductor and I extended it to the case of the interface with a dielectric insulator, a situation encountered in the channel of the organic transistor. These calculations showed that when the polarity of the dielectric increases the inter-molecular transfer integral decreases. This is confirmed by experimental measurements showing increasingly low values of mobility when the permittivity of the insulator increases.

EPFL2006

Room Temperature as a Goldilocks Environment for CH3NH3PbI3 Perovskite Solar Cells: The Importance of Temperature on Device Performance

Juan-Pablo Correa-Baena, Ulf Anders Hagfeldt, Tor Jesper Jacobsson, Wolfgang Richard Tress

Terrestrial applications of solar cells during day-night cycling as well as operation in winter and summer involve substantial temperature variations, which influence the photophysics as well as the charge separation and transport properties in the various materials employed in a device. In this study, the optical absorption of methylammonium lead iodide (MAPbI(3)) and the device performance of MAPbI(3) solar cells have been investigated in an extended temperature range between -190 and 80 degrees C. The optical properties were found to change by only a small amount in that temperature range. The device performance did, however, show more dramatic changes and decreased in a reversible manner for temperatures both higher and lower than room temperature. For temperatures up to 80 degrees C and down to -80 degrees C, the drop in performance was up to 25% compared to the room temperature value. Given thermal stability and reversible device performance, this is probably not a showstopper for terrestrial applications of perovskite solar cells but should be considered when evaluating the total energy yield under outdoor operations. At temperatures of 100 degrees C and below, which are relevant for outer atmosphere and space applications, the performance decreases rather dramatically and approaches zero at even lower temperature. Irreversible changes set in for temperatures above 50 degrees C. In addition, the hysteresis decreases at reduced temperatures. As the effects for the absorption properties are minor, the decrease in performance can be attributed to a temperature induced limitation in the transport and extraction of the photogenerated charge carriers which is seen as a strong increase of the series resistance at reduced temperature. The drop of the photovoltage for temperatures below -100 degrees C might be related to reduced charge carrier separation in the perovskite due to excitonic effects and a lower dielectric constant.

American Chemical Society2016

Interface engineering in solid-state dye-sensitized solar cells

Jessica Krüger

Dye-sensitised nanocrystalline solar cells are currently subject of intense research in the framework of renewable energies as a low-cost photovoltaic device. In particular dye-sensitised cells based on spiro-MeOTAD have gained attention as promising approach towards an organic solid-state solar cell. However, the efficiency in such dye-sensitised solid-state solar devices (SSD) was so far only ca. 10 % of the values reported at AM1.5 for the classical dye-sensitised solar cell with an electrolyte hole transporting medium (DSSC). The objective of the present work is to study the limitations that emerge from the exchange of the electrolyte by the solid-state system and that oppose photovoltaic photon-to-electron conversion as high as for the DSSC. Interfacial charge recombination is an important loss mechanism in dye-sensitised solar cells. This is particularly true for SSD, as the solid hole-transporting medium is less efficient in screening of internal fields which assist recombination. A variety of strategies were tested in the SSD to minimise interfacial charge recombination. The most promising approach was the blending of the hole-transporting medium with tert.-butylpyridine (tBP) and lithium ions. Optical and electrochemical techniques, such as nanosecond laser spectroscopy, impedance spectroscopy and photovoltaic characterisation measurements, were used to study the impact of the additives on the SSD. Both lithium ions as well as tBP were found to increase the open circuit potential of the SSD. At the same time tBP was found to considerably lower the current output. The interaction of the additives was studied and their concentration in the spiro-MeOTAD medium optimised. The doping of the spiro-MeOTAD film, which was intended to support the hole transport, was found to enhance interfacial recombination significantly. The morphological properties of the TiO2, in particular layer thickness, particle size and film porosity, play a more important role in the SSD than in the DSSC. Penetration of the hole conductor into the TiO2 pores and electron diffusion length are coupled to these properties. As a result the light harvesting cannot be controlled at will via the TiO2 film thickness and the active surface area for dye adsorption. An enhanced light harvesting for thin TiO2 layers offers advantages for the charge transport and the formation of the interpenetrating network. The dye uptake in presence of silver ions was found to increase the dye loading and to significantly improve the device performance of thin TiO2 layer devices. The mechanism of this simple dye modification technique was studied by a variety of spectroscopic techniques. From spectroscopic evidence it is inferred that the silver is binding to the sensitiser via the ambidentate thiocyanate, allowing the formation of ligand-bridged dye complexes. The beneficial influence of the silver ions on the photovoltaic performance was not limited to the application of the standard N3 dye nor to the spiro-MeOTAD. SSDs were furthermore studied by frequency resolved techniques. Intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS) were performed over a wide range of illumination intensities. The IMPS and IMVS responses provide information about charge transport and electron-hole recombination processes respectively. For the range of light intensities investigated, the dynamic photocurrent response appears to be limited by the transport of electrons in the nanocrystalline TiO2 film rather than by the transport of holes in the spiro-MeOTAD. The diffusion length of electrons in the TiO2 was found to be 4.4 μm. This value was almost independent of the light intensity as a consequence of the fact that the electron diffusion coefficient and the rate constant for electron-hole recombination both increase in the same way with light intensity but with opposite sign. The results of this work provide for a substantial improvement of the overall photovoltaic performance compared to earlier results for this type of SSD. However, this study reveals also that high conversion efficiencies as are measured for DSSC are not likely to be reachable with the spiro-MeOTAD system due to the significantly slower charge transport in the spiro-MeOTAD compared to the electrolyte redox mediator.

EPFL2003