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This paper presents a monolithic approach for the integration of silicon nanowires (Si NWs) with microelectromechanical systems (MEMS). The process is demonstrated for the case of co-fabrication of Si NWs with a 10-μm-thick MEMS on the same silicon-on-insulator (SOI) wafer. MEMS is designed in the form of a characterization platform with an electrostatic actuator and a mechanical amplifier spanned by a single Si NW. This integrated platform is utilized for the successful measurement of Si NW piezoresistive gauge factor (GF) under a uniform uniaxial stress. Available techniques in this field include: Indirect (substrate) or direct (actuator) bending of Si NW necessitating rigorous models for the conversion of load to stress, inanomanipulation and attachment of Si NW on MEMS, a non-monolithic technique posing residual stress and alignment issues, and heterogeneous integration with separate Si layers for Si NW and MEMS, where a single SOI is not sufficient for the end product. Providing a monolithic solution to the integration of micro and nanoscale components, the presented technique successfully addresses the shortcomings of similar studies. In addition to providing a solution for electromechanical characterization, the technique also sets forth a promising pathway for multiscale, functional devices produced in a batch-compatible fashion, as it facilitates co-fabrication within the same Si crystal.
Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani, Mustafa Yilmaz
Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani
Tobias Kippenberg, Rui Ning Wang, Junqiu Liu, Wenle Weng, Zeyu Zhang, Chao Xiang, Zeyu Zhang