Monolithic technology for silicon nanowires in high-topography architectures

Integration of silicon nanowires (Si NWs) in three-dimensional (3D) devices including integrated circuits (ICs) and microelectromechanical systems (MEMS) leads to enhanced functionality and performance in diverse applications. The immediate challenge to the extensive use of Si NWs in modern electronic devices is their integration with the higher-order architecture. Topography-related limits of integrating Si NWs in the third dimension are addressed in this work. Utilizing a well-tuned combination of etching and protection processes, Si NWs are batch-produced in bulk Si with an extreme trench depth of 40. μm, the highest trench depth obtained in a monolithic fashion within the same Si crystal so far. The implications of the technique for the thick silicon-on-insulator (SOI) technology are investigated. The process is transferred to SOI wafers yielding Si NWs with a critical dimension of 100. nm along with a trench aspect ratio of 50. Electrical measurements verify the prospect of utilizing such suspended Si NWs spanning deep trenches as versatile active components in ICs and MEMS. Introducing a new monolithic approach to obtaining Si NWs and the surrounding higher-order architecture within the same SOI wafer, this work opens up new possibilities for modern sensors and power efficient ICs.

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Yusuf Leblebici, Zuhal Tasdemir

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with microstructures up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. All cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire.

Institute of Physics2016

Compact fast-steering tip/tilt laser scanner for high power material processing applications

Moustapha Hafez

The common configuration for deflecting laser beams in two dimensions is based on two single-axis galvanometric scanners placed perpendicular to each other. Over recent years, these fast scanners have proved to be both very reliable and very accurate. They are widely available in the marketplace and have wide-ranging technical specifications. However, such a configuration is rather bulky and can not satisfy the needs of industry which seeks compact solutions for an easy integration of these scanning heads into their production lines. In addition, two separate mirrors leads to optical aberrations when these scanning heads are used in conjunction with scanning lenses, which are specially designed for a single entrance pupil. Therefore, a compact fast-steering tip/tilt laser scanner with a single mirror would act as a key component in diverse applications, e.g. in material processing, astronomy, intersatellite laser communications, imaging systems, bio-medical and ophthalmologic applications. The compact two-axis tilt laser scanner presented in this work can perform a variety of functions such as image tracking, beam stabilization and alignment, line-of-sight pointing, and scene scanning. Designing such a scanner required a multi-disciplinary approach involving optics, mechanics, electromagnetics, sensors and control theories. The scanner is composed of one single mirror with a large active area and has a single point of rotation for the two axes of tilt. Moreover, the center of gravity coincides with the center of rotation to reach optimum dynamic behavior. The scanner's compact dimensions allow an easy integration in the various optical systems. Furthermore, the mirror is easily interchangeable which gives greater flexibility in the choice of the laser source. Another major advantage of the proposed design is its ability to be scaled down to miniaturized versions. The scaling depends mainly on the active surface of the mirror, which is generally specified by the application. The larger the mirror, the higher its inertia and the larger are the actuators in order to guarantee high performance. Two pairs of push-pull linear electromagnetic actuators are used to drive the mirror of the scanner. The mirror suspension is based on a sliding bearing composed of a cone-ball contact with optimized friction and wear behavior. A magnetic pre-load force is used to hold the mirror and to give sufficient rotational stiffness. Furthermore, a position transducer based on a photodetector and a miniature laser pen is integrated in the module and is used for closed loop feedback positioning. The mirror can be tilted around both axes by ± 61mrad (± 3.5°) with an accuracy better than 50μrad. Moreover, a differential resolution in the order of 2.5μrad, and settling times for maximum tip and tilt deflections of 10ms and 14ms respectively are achieved. The overall volume of the scanner is 30 x 40 x 50 mm3, and its total weight does not exceed 90g. Design, simulations and experimental investigations were carried out in this work in order to optimize the different components of the tip/tilt scanner. These components are: the motors, the bearing system, the position transducer and the feedback control loop. An analytical model that allows an optimization of the geometrical parameters for an electromagnetic actuator based on rectangular coils and magnets is proposed. This model proved to be very reliable and can be extended to the design of a variety of electromagnetic driving systems. In addition, an extensive analysis of the beam path distortions generated when a single mirror is pivoted around two axes is covered. Furthermore, correcting equations used to compensate for the systematic errors resulting from this configuration are proposed. The tip/tilt scanner is suited to a variety of applications in industrial material laser processing. These applications are not just restricted to conventional processes like welding, cutting, drilling, and marking, but also to new technologies such as micro-manipulation of parts by laser. In this new approach, bending and shrinkage of the material result due to laser irradiation, allowing fast adjustment and positioning of micro-mechanical and opto-mechanical components with sub-micron accuracy. Furthermore, local annealing of shape memory alloys, leading to stiffness variation in monolithic parts such as micro-grippers, represents a very innovative application in smart materials. On the other hand, the scanner is also a key component in bio-medical and ophthalmologic applications. The first measurements carried out with the scanner for optical tomography of the retina appeared very promising. Furthermore, an optical tweezers set-up has been realized using the scanner, allowing easy and flexible manipulation of laser beam trapped cells and molecules.

EPFL2000

Silicon Nanowire Arrays and Crossbars: Top-Down Fabrication Techniques and Circuit Applications

Mohamed Haykel Ben Jamaa, Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Yusuf Leblebici, Davide Sacchetto

Several nanowire technologies have emerged recently, providing a way to continue the scaling down of complementary metal-oxide-semiconductor (CMOS) technology. The opportunities offered at the level of logic circuit design depend on the technology properties, and some applications seem to be suitable for specific technologies. In this paper, we survey three nanowire technologies that yield nanowire arrays. All of them depend on the photolithography limit but they differ with respect to the processing and the device properties. We show the ability of the spacer technique to yield nanowires with a pitch below the photolithography limit. We introduce the nanowire crossbars in a pure CMOS process and extract the parasitics that affect nanowire crossbar circuits. Vertically stacked nanowires are also demonstrated with the deep reactive ion etching (DRIE) process. We link the surveyed processes to specific circuit architectures that are optimized for the considered technologies. A nanowire decoder for sub-lithographic nanowires is demonstrated with the smallest size compared to other competing technologies. Then an optimized crossbar multiplexer is presented, which takes into account the presence of parasitics. Finally, a general library of logic gates based on vertically stacked nanowires is evaluated showing a smaller area and a better performance than CMOS.

2011

Compact fast-steering tip/tilt laser scanner for high power material processing applications

Moustapha Hafez

EPFL2000