Predictive Determination of Band Gaps of Inorganic Halide Perovskites

We carry out first-principles calculations of band gaps of cubic inorganic perovskites belonging to the class CsBX3, with B = Pb, Sn and X = Cl, Br, I. We use the quasi particle self-consistent GW method with efficient vertex corrections to calculate the electronic structure of the studied materials. We demonstrate the importance of including the higher lying core and semicore shells among the valence states. For a meaningful comparison with experimental values, we account for thermal vibrations and disorder through ab initio molecular dynamics. Additionally, we calculate the spin orbit coupling at levels of theory of increasing accuracy and show that semilocal density functionals significantly underestimate these corrections. We show that all of these effects need to be properly included in order to obtain reliable predictions for the band gaps of halide perovskites.

Comprehensive modeling of the band gap and absorption spectrum of BiVO4

Francesco Ambrosio, Alfredo Pasquarello, Igor Reshetnyak, Julia Anna Wiktor

We present first-principles calculations of the electronic structure of BiVO4 at various levels of theory. In the calculations, we take into account a series of effects that affect the band gap, i.e., spin-orbit coupling, electron-hole interaction, nuclear quantum motions, and thermal vibrations. All these effects lead to a significant renormalization of the band gap. After including the relevant corrections, the values achieved with the GW level of theory closely match the experiment. Additionally, by treating excitonic effects through the Bethe-Salpeter equation, we obtain an optical band gap and an absorption spectrum in good agreement with experimental data. Through the calculation of Tauc plots, we show that this technique gives the optical band gap within about 0.14 eV, but argue that it is unable to distinguish between direct and indirect bad gaps in the case of BiVO4.

2017

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

Audrius Alkauskas, Peter Broqvist, Alfredo Pasquarello

We introduce a scheme for the calculation of band offsets and defect energy levels at semiconductor-oxide interfaces. Our scheme is based on the use of realistic atomistic models of the interface structure and of hybrid functionals for the evaluation of the electronic structure. This scheme is herein applied to the technologically relevant Si-SiO2-HfO2 stack. Calculated band offsets show a very good agreement with experimental values. In particular, we focus on the energy levels of the oxygen vacancy defect and the interstitial hydrogen impurity. The defect levels are aligned with respect to the interface band structure and determined for varying location in the dielectric stack. The most stable charge states are identified as the Fermi level sweeps through the silicon band gap.

American Institute of Physics2009

Effect of metal cation replacement on the electronic structure of metalorganic halide perovskites: Replacement of lead with alkaline-earth metals

Ulf Anders Hagfeldt, Tor Jesper Jacobsson

Organic and inorganic lead halogen perovskites, and in particular, CH3NH3PbI3, have during the last years emerged as a class of highly efficient solar cell materials. Herein we introduce metalorganic halogen perovskite materials for energy-relevant applications based on alkaline-earth metals. Based on the classical notion of Goldschmidt's rules and quantum mechanical considerations, the three alkaline-earth metals, Ca, Sr, and Ba, are shown to be able to exchange lead in the perovskite structure. The three alkaline-earth perovskites, CH3NH3CaI3, CH3NH3SrI3, and CH3NH3BaI3, as well as the reference compound, CH3NH3PbI3, are in this paper investigated with density functional theory (DFT) calculations, which predict these compounds to exist as stable perovskite materials, and their electronic properties are explored. A detailed analysis of the projected molecular orbital density of states and electronic band structure from DFT calculations were used for interpretation of the band-gap variations in these materials and for estimation of the effective masses of the electrons and holes. Neglecting spin-orbit effects, the band gap of MACaI(3), MASrI(3), and MABaI(3) were estimated to be 2.95, 3.6, and 3.3 eV, respectively, showing the relative change expected for metal cation exchange. The shifts in the conduction band (CB) edges for the alkaline-earth perovskites were quantified using scalar relativistic DFT calculations and tight-binding analysis, and were compared to the situation in the more extensively studied lead halide perovskite, CH3NH3PbI3, where the change in the work function of the metal is the single most important factor in tuning the CB edge and band gap. The results show that alkaline-earth-based organometallic perovskites will not work as an efficient light absorber in photovoltaic applications but instead could be applicable as charge-selective contact materials. The rather high CB edge and the wide band gap together with the large difference of the electron and hole effective masses make them good candidates for n-type selective layers in hot carrier injection solar cell devices together with some light absorber candidates. The fact that they have similar lattice constants as the lead perovskite and suitable positions of the valence band edges open up the possibility to use them also as thin epitaxial p-type hole selective contacts in combination with the lead halogen perovskite materials. This can lead to both charge selectivity as well as to superior crystal growth of lead perovskite with less contact stress, which is interesting for further investigations.

Amer Physical Soc2016

Effect of metal cation replacement on the electronic structure of metalorganic halide perovskites: Replacement of lead with alkaline-earth metals

Ulf Anders Hagfeldt, Tor Jesper Jacobsson

Amer Physical Soc2016