Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-an ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
Extended X-ray absorption fine structure (EXAFS) above the In K-edge of luminescent InGaN heterostructures provides a unique probe of local structure on an atomic length scale. Through a process of fitting the experimental spectrum, we can refine a model o ...
Photoelectron spectromicroscopy, the combination of conventional photoelectron spectroscopy and high lateral resolution, is a novel technique that exploits the high brightness of the most recent synchrotron sources. We briefly review its main implementatio ...
Leakage conduction of Pt-Pb(ZrXTi:(1-X))O-3-Pt capacitors is studied by means of different measuring techniques and analyzed in terms of semiconductor properties of the system. Based on the experimental data, it is concluded that two different regimes of c ...
Thick GaN layers grown by HVPE on different starting layers were examined. The resulting layers were found to be homogeneous with good crystalline and surface quality over the whole 2-inch wafer, strongly depending on the starting layers and gas phase comp ...
The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points ...
The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band ...
