Strain engineering a 4a x root 3a charge-density-wave phase in transition-metal dichalcogenide 1T-VSe2
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A Hall mobility as high as 176,200 cm2V-1s-1 at 77 K with N(d)-N(a) = 1.3 x 10(14) cm-3 has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for la ...
A set of parameters for the temperature dependence of the direct band gap of InP has been determined by fitting the excitonic recombination energy in the photoluminescence (PL) spectra between 2 and 250 K. We have used high-quality InP samples grown by che ...
The mechanism of strain relief for compressively stressed Ag layers epitaxially grown on Pt(111) is studied by scanning tunneling microscopy. The strain in the compressed commensurate (1X1) Ag monolayer on Pt(111) is relieved in the bilayer by the formatio ...
We have measured phase modulation in the first chemical beam epitaxy grown InGaAsP/InP barrier, reservoir, and quantum well electron transfer structures. We obtain a negative refractive index change, DELTAn, similar to that found in the InGaAs/InAlAs syste ...