Comprehensive modeling of the band gap and absorption spectrum of BiVO4

We present first-principles calculations of the electronic structure of BiVO4 at various levels of theory. In the calculations, we take into account a series of effects that affect the band gap, i.e., spin-orbit coupling, electron-hole interaction, nuclear quantum motions, and thermal vibrations. All these effects lead to a significant renormalization of the band gap. After including the relevant corrections, the values achieved with the GW level of theory closely match the experiment. Additionally, by treating excitonic effects through the Bethe-Salpeter equation, we obtain an optical band gap and an absorption spectrum in good agreement with experimental data. Through the calculation of Tauc plots, we show that this technique gives the optical band gap within about 0.14 eV, but argue that it is unable to distinguish between direct and indirect bad gaps in the case of BiVO4.

Electronic Transport in 2D Materials with Strong Spin-orbit Coupling

Artem Pulkin

The thesis describes the computational study of structural, electonic and transport properties of monolayer transition metal dichalcogenides (TMDs) in the stable 2H and the metastable 1T' phases. Several aspects have been covered by the study including the electronic properties of the topological quantum spin Hall (QSH) state in the 1T' monolayer phase as well as the effects of strain, periodic line defects, interfaces and edges of monolayer TMDs. The electronic properties of the bulk monolayer phases were described by the ab-initio density functional theory framework while the electronic and transport properties of 1D defects were calculated using the non-equilibrium Green's function formalism. A specific focus was made on the transport of spin-polarized charge carriers across line defects in the monolayer 2H phase. Subject to energy, pseudomomentum and spin conservation, the size of the transport gap is governed by both bulk properties of a material and symmetries of a line defect. Outside the transport gap energy region, the charge carriers are discriminated with respect to their spin resulting in the spin polarization of the transmitted current. Next, the properties of the metastable monolayer 1T' phase were studied. The presence of a sufficiently large band gap is crucial to observe the QSH phase in the family of materials by probing the topological boundary states. The meV-order band gaps of the 1T' phase of monolayer TMDs were found to be sensitive to materials' lattice constants suggesting the control of the band gap size by strain. In particular, the electronic band structure and the size of the band gap in monolayer 1T'-WSe2 were found to be in agreement with spectroscopy studies. The topologically protected states at the edges of the monolayer 1T' phase as well as at the boundaries between the topological 1T' phase and the trivial 2H phase of monolayer TMDs were studied. Specific atomic structure configurations were suggested to observe experimentally the topological protection of the charge carrier transport against back-scattering. Finally, in the context of lateral semiconducting device engineering, the electronic and transverse transport properties of 2H-1T' phase boundaries as well as the dimerization defects in the 1T' phase were investigated. Both kinds of defects considered exhibit a relatively large transmission probability for the charge carriers crossing the defects. However, the differences between the shapes of bulk bands of the two phases open a sizeable transport gap for charge carriers crossing periodic domain boundaries between the monolayer 2H and 1T' phases. The calculated formation energies of dimerization defects were found to be relatively low suggesting their high concentration in real samples of monolayer 1T'-TMDs. Additionally, the thesis includes studies of magnetic dopants on the surface of Bi2Te3 and atomic vacancies in monolayer 2H-MoSe2 where the electronic properties of point defects were calculated and compared to experimental results. The two possible adsorption sites of Fe on the surface of Bi2Te3 both show a large out-of-plane magnetic anisotropy in agreement with experiments. The calculated local electronic properties of Se vacancies in monolayer 2H-MoSe2 show the presence of in-gap states which are not observed in experiment. Nevertheless, the combination of theoretical and experimental scanning tunneling microscopy images allowed the unambiguous identification of the vacancy defect.

EPFL2017

Sizable Excitonic Effects Undermining the Photocatalytic Efficiency of beta-Cu2V2O7

Raffaella Buonsanti, Alfredo Pasquarello, Igor Reshetnyak, Mariateresa Scarongella, Michal Stanislaw Strach, Julia Anna Wiktor

Copper vanadates have been proposed as promising photoanodes for water-splitting photoelectrochemical cells, but their performance has recently been shown to be severely limited. To understand this behavior, we study the electronic structure and the optical properties of beta-Cu(2)V(2)O(7 )both experimentally and computationally. The measured absorption spectrum shows an absorption peak at 1.5 eV followed by the onset of an apparent continuum at 2.26 eV, as generally found for this class of materials. We perform calculations within the framework of the QSG (W) over tilde method and the Bethe-Salpeter equation while including effects of magnetic ordering, nuclear quantum motion, and thermal vibrations. We demonstrate the occurrence of two kinds of excitons with high binding energies upon optical excitation in beta-Cu2V2O7, which account for the first absorption peak and the lower edge of the apparent continuum. The results are confirmed by photoluminescence measurements, where sub-band-gap emissions are found for both excitons. These results provide an explanation for the low photocatalytic efficiencies of copper vanadates, despite the favorable size of their optical band gaps.

2018

Electronic Transport in 2D Materials with Strong Spin-orbit Coupling

Artem Pulkin

EPFL2017