RF bias to suppress post-oxidation of mu c-Si:H films deposited by inductively-coupled plasma using a planar RF resonant antenna
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We have developed a novel strategy for localized electrochemical deposition (LECD) to improve both the lateral resolution of the process and the porosity of the fabricated high-aspect-ratio microstructures. The strategy is based on accurately controlling t ...
The deposition of particles and substances in air is under strong influence of the precipitation patterns of the atmosphere. Most multimedia models, like type III Mackay models, treat rain as a continuous phenomenon. This may cause severe overestimation of ...
Plasma enhanced chemical vapour deposition (PECVD) of thin films such as amorphous silicon has widespread applications especially in the field of photovoltaic solar cells and thin-film transistors for flat screen production. Industrial applications require ...
A numerical two dimensional model to calculate the deposition uniformity over the whole electrode surface in large area rectangular plasma enhanced chemical vapour deposition reactors is presented. In this model, the three dimensional mass and species cont ...
Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 μm pitch based on a n-i-p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. Th ...
Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...
The potential, time, and concn. dependence of the potentiostatic electropolymn. of the thienyl-substituted transition metal complex [Os(bttpy)22+] onto platinum disk microelectrodes is reported, bttpy is 4'-(5-(2,2'-bithienyl))-2,2':6',2''-terpyridine. Oxi ...
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard) BENVENUTI G (BENV-Individual) AMOROSI S (AMOR-Individual) HALARY-WAGNER E (HALA-Individual)2002
Understanding the growth mechanism in molecular organic thin films is fundamental to their applications in organic electronics. We present an extensive study of the growth mechanism of pentacene thin films on silicon dioxide (SiO2) using atomic ...
Deposition of thin films via hydrothermal method has various advantages: low deposition temperature, high purity, deposition on a three-dimensional structure, and a large thickness. Although an epitaxial lead zirconate titanate (PZT) thin-film deposition h ...