A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition
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Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
High-Q, bulk acoustic wave composite resonators based on a symmetric layer sequence Of SiO2-A1N-SiO2 sandwiched between electrodes have been developed. Acoustic isolation was achieved by means of deep silicon etching to obtain membrane type TFBAR's. Three ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
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Springer, 101 Philip Drive, Norwell, Ma 02061 Usa2008
