Edge-contacted graphene with slope engineering by stencil lithography

One approach to overcome the high contact resistance between 3D metals and 2D materials/heterostructures is employing edge contacts [1]. A low-resistance edge contact on boron nitride/graphene/boron nitride heterostructure using photolithography has been demonstrated in 2013[1]. The aim of this project is therefore to simplify the process by replacing the photolithography step with stencil lithography. In the first part of the project, the focus is on the transferring of chemical vapor grown graphene to SiO2/Si wafers. We were able to make two graphene transfers; however, in both cases the graphene had many cracks and tears which would distort any electrical measurements. Therefore, we used these samples for experimenting with etching of HfO2 and slope engineering and showed that ion beam etching is suitable for both purposes. Later, graphene on SiO2/Si chips were purchased which were accordingly processed and used for electrical characterization. Some of the (transfer length measurement) patterns showed conductive behavior; however, the measured contact resistance was considerably high (8kΩ). Further studies are required to explain the high contact resistance observed. A good starting point would be to obtain a cross-section sample from the contact area using focused ion beam and study the said area using transmission electron microscopy.

Embrittlement induced by the synergistic effects of radiation damage and helium in structural steels

Kun Wang

Ferritic/martensitic steels are candidate materials for fusion reactor structural components, liquid metal containers of spallation neutron sources, and accelerator driven systems, with good radiation resistance and thermo-mechanical properties. However, embrittlement resulting from the combined effects of radiation induced displacement damage (measured in dpa = displacement per atom) and transmutation products, especially helium gas, is one of the key issues. Four different steels were selected for mechanical and microstructural studies to understand the mechanisms of embrittlement induced by the combined effects of displacement damage and helium after irradiation in SINQ, the Swiss spallation source. The irradiations conditions were in the range: 10.7 ¿ 20.4 dpa with 850-1750 appm He at 160-300 °C. The evolution of the mechanical properties after irradiation was investigated by tensile and hardness tests. Radiation-induced defect clusters and helium bubbles were quantified by transmission electron microscopy (TEM). Emphasis was put on the deformation mechanisms under the different observed fracture mode, (ductile, quasi-cleavage and intergranular), whose occurrence depends on the irradiation conditions (dpa, He content and irradiation temperature). The tensile stress-strain curves and the scanning electron microscopy images of fracture surfaces showed distinct fracture mechanisms under different irradiation and test conditions. The tensile tests showed a yielding stress increase and loss of ductility of irradiated specimens. Hardness was measured on the specimens before tensile testing. The hardness results demonstrated an increasing trend with irradiation dose and helium content. TEM observations were done for all irradiated fractured specimens. Small defect clusters were observed in the 12.3 dpa specimen, but large defect clusters with loop-shape were very few. In the specimens of 17.2, 17.7 and 20.4 dpa, many large dislocation loops were detected besides small clusters. In addition, helium bubbles were observed in all specimens. The average size of defect clusters increased from 4.2 nm to 11.8 nm with dose increasing from 12.3 dpa to 20.4 dpa, whereas the number density did not change significantly. Meanwhile, the average size of visible helium bubbles increased from 1.03 nm to 1.93 nm. The microstructures in deformed area of irradiated specimens were observed and defect free channels with {110} and {112} slip planes were found in some specimens, indicating plastic flow localization. The average width of the channels is about 100 nm. Regarding the brittle samples, the TEM-lamella were extracted directly below intergranular fracture surfaces or cleavage surfaces by focused ion beam. Strikingly, deformation twinning was observed as the main feature in three irradiated specimens at high dose. Only twins with {112} planes were observed in all of these samples. The average thickness of twins is about 34 nm. Twins started from a fracture surface became gradually thinner with distance away from the fracture surface and stopped in the matrix finally. Features such as twin-precipitates interaction, twin-grain boundary and/or lath boundary interaction were observed. Twinning bands were seen to be arrested by grain boundaries or large precipitates, but could penetrate martensitic lath boundaries. Unlike the case of defect free channels, inside twins small defect-clusters, dislocation loops and dense small helium bubbles were observed.

EPFL2015

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thickness as they consist only of few atomic layers and hold a great promise for future scaling of electronic devices. Further, their unique band structure provides a platform for the exploration of novel physics in the field of spin and valleytronics. The presence of a large band gap allows fully electrostatic control over doping and current flow, as well as the realization of novel optoelectronic devices. On of the most appealing and readily available 2D material is molybdenum disulphide (MoS2). This thesis is concentrated on the electronic properties of monolayers MoS2 ranging from the investigation of line defects in synthetically grown material to advanced study of the confinement of charge carriers at low temperature as function of magnetic field. A chapter is describing the details of each of the principal experiments. In Chapter 4 we study the properties of epitaxially grown MoS2 monolayers by means of electrical measurements and advanced scanning probe techniques. After confirming the high quality of the grown crystallites, we investigate the predominant types of occurring grain boundaries by means of Kelvin probe force microscopy. Due to the highly oriented growth, we find that the electronic properties of the film are homogeneous even across the line defects. This fact is confirmed by the observation of constant mobility even in devices over large area containing multiple grain boundaries. Chapter 5 presents different approaches for the fabrication of high-quality dual-gated MoS2 field effect transistors (FETs). Dielectric layers deposited by means of atomic layer deposition can guarantee good mobility and low contact resistance, but the observation of low-dimensional effects may be hindered due to the presence of charged impurities. On the other hand the use of hexagonal boron nitride as dielectric and few layer graphene as contact material is shown to yield very high mobility and low contact resistance. Using dual gated FETs with such material configuration, an electrostatically controlled quantum point contact (QPC) is realized in monolayer MoS2 and presented in Chapter 6. We find that the device conductance is quantized in multiples of e^2/h revealing the lifting of spin and valley degeneracies. Further, we perform bias spectroscopy at different magnetic fields and extract subband energy spacing from 0.8 (at 0T) to 2 meV (at 9.8T) and g-factor in the conduction band of 2.12±0.13. Finally, in Chapter 7 we propose several methods aiming the fabrication of a quantum dot in MoS2. The electrostatic definition of a small conductive island, weakly couples to two highly doped charge carrier reservoirs, requires similar advanced engineering of the dielectric material environment. Despite the low stability, we find possible regimes, in which controlled tunneling from and to a well defined quantum dot can be detected. The charging energy measured electrically is in very good agreement with the lithographically defined size of the island. In conclusion, this work provides insights about the electron transport in monolayer MoS2 exploring grain boundaries, dielectric environment and electron confinement. The results contribute to better understanding of its electronic properties.

EPFL2018

Embrittlement induced by the synergistic effects of radiation damage and helium in structural steels

Kun Wang

EPFL2015

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

EPFL2018