Elastic strain engineering for ultralow mechanical dissipation
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...
This work addresses the behaviour of replicated microcellular pure aluminium under multiaxial stress states and in the presence of stress and strain localization sites. Processing of the foam was conducted in-house, using the replication process. The main ...
A simplified model is proposed to quantity the effect of damage in the form of particle cracking on the elastic and plastic behaviour of particle-reinforced metal matrix composites under uniaxial tensile loading: cracked particles are simply replaced, in a ...
The objective of this review is to examine how the concept of plasticity is used in geophysical fluid dynamics. Rapid mass movements such as snow avalanches or debris flows involve slurries of solid particles (ice, boulder, clay, etc.) within an interstiti ...
Nanocrystalline metals have been an area of great interest in recent years due to their enhanced characteristics. One of the most striking is implied by the Hall-Petch relation: with decreasing grain size the material becomes stronger. This promise is fulf ...
Aeroelastic tailoring requires structural compliance and thus often conflicts with stiffness requirements to carry prescribed aerodynamic loads. Recently however, the application of cellular structural concepts has suggested the potential to achieve compli ...
This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...
Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...
During casting of aluminum alloys, the partially solidified material is submitted to thermally induced strains that can lead to severe casting defects, such as hot tearing. In this work, carried out in the frame of the European project VIR[CAST], the rheol ...
Strain engineering is used to maintain Moore's Law in scaled CMOS devices and as a technology booster for More-than-Moore devices in the nanoelectronics era. Strain is crucial because of its ability to increase electron and hole mobilities in Si. However, ...