Publication
Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
Publications associées (37)
Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices
GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...
EPFL2024III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications
Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...
EPFL2024Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy
Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller
Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...
IOP PUBLISHING LTD2021Routes for Efficiency Enhancement in Fluorescent TADF Exciplex Host OLEDs Gained from an Electro-Optical Device Model
Beat Ruhstaller, Markus Regnat
Fluorescence-based organic light-emitting diodes (OLEDs) using thermally activated delayed fluorescence (TADF) have increasingly attracted attention in research and industry. One method to implement TADF is based on an emitter layer composed of an exciplex ...
WILEY2020InAlN underlaver for near ultraviolet InGaN based light emitting diodes
Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller, Rolf Erni
We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...
2019Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes
Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...
EPFL2019Optoelectronic Properties of Layered Perovskite Solar Cells
Mohammad Khaja Nazeeruddin, Sanghyun Paek, Yonghui Lee, Kyung Taek Cho
Herein, the optoelectronic properties of interface-engineered perovskite 2D|3D-heterojunction structure solar cells are reported. The reciprocity theorem is applied to determine the maximum open-circuit voltage (V-oc) the device can deliver under solar ill ...
2019Near-infrared absorbing cyanine dyes for all-organic optical upconversion devices
Roland Hany, Matthias Diethelm
The development of near-infrared (NIR) photodetection technologies is driven by emerging applications such as medical imaging or optical sensors for electronic displays and machine vision. An all-organic upconverter (OUD) is a device that converts incident ...
2019Electroluminescence of Single InGaN/GaN Micropyramids
Hua Zhang, Gwénolé Jean Jacopin
The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phas ...
PLEIADES PUBLISHING INC2019III-Nitride Semiconductor Photonic Nanocavities on Silicon
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...
EPFL2018