InAlN underlaver for near ultraviolet InGaN based light emitting diodes
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We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-an ...
Light emitting diodes (LEDs) based on In(x)Gal(1-x)N (x = 0.15-0.2)/GaN multiple-quantum wells ( MQWs) have been grown on sapphire substrates. Their wavelength emission can be tuned from blue to orange by increasing the QW thickness. This opens the way for ...
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers wer ...
We present a study on the improvement of the external Quantum Efficiency (QE) of Gallium-Nitride-based Light Emitting Diodes (LEDs) by the use of the Single Mirror (SMLED) design [N.E.J. Hunt et al., Electron. Lett. 28, 2169 (1992)]. Three different substr ...
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