First-principles calculations of iodine-related point defects in CsPbI3

We present here first principles hybrid functional calculations of the atomic and electronic structure of several iodine-related point defects in CsPbI3, a material relevant for photovoltaic applications. We show that the presence of neutral interstitial I atoms or electron holes leads to the formation of di-halide dumbbells of I-2(-) (analogous to the well-known situation in alkali halides). Their formation and one-electron energies in the band gap are determined. The formation energy of the Frenkel defect pair (I vacancies and neutral interstitial I atoms) is found to be approximate to 1 eV, and as such is smaller than the band gap. We conclude that both iodine dumbbells and iodine vacancies could be, in principle, easily produced by interband optical excitation.

Effect of metal cation replacement on the electronic structure of metalorganic halide perovskites: Replacement of lead with alkaline-earth metals

Ulf Anders Hagfeldt, Tor Jesper Jacobsson

Organic and inorganic lead halogen perovskites, and in particular, CH3NH3PbI3, have during the last years emerged as a class of highly efficient solar cell materials. Herein we introduce metalorganic halogen perovskite materials for energy-relevant applications based on alkaline-earth metals. Based on the classical notion of Goldschmidt's rules and quantum mechanical considerations, the three alkaline-earth metals, Ca, Sr, and Ba, are shown to be able to exchange lead in the perovskite structure. The three alkaline-earth perovskites, CH3NH3CaI3, CH3NH3SrI3, and CH3NH3BaI3, as well as the reference compound, CH3NH3PbI3, are in this paper investigated with density functional theory (DFT) calculations, which predict these compounds to exist as stable perovskite materials, and their electronic properties are explored. A detailed analysis of the projected molecular orbital density of states and electronic band structure from DFT calculations were used for interpretation of the band-gap variations in these materials and for estimation of the effective masses of the electrons and holes. Neglecting spin-orbit effects, the band gap of MACaI(3), MASrI(3), and MABaI(3) were estimated to be 2.95, 3.6, and 3.3 eV, respectively, showing the relative change expected for metal cation exchange. The shifts in the conduction band (CB) edges for the alkaline-earth perovskites were quantified using scalar relativistic DFT calculations and tight-binding analysis, and were compared to the situation in the more extensively studied lead halide perovskite, CH3NH3PbI3, where the change in the work function of the metal is the single most important factor in tuning the CB edge and band gap. The results show that alkaline-earth-based organometallic perovskites will not work as an efficient light absorber in photovoltaic applications but instead could be applicable as charge-selective contact materials. The rather high CB edge and the wide band gap together with the large difference of the electron and hole effective masses make them good candidates for n-type selective layers in hot carrier injection solar cell devices together with some light absorber candidates. The fact that they have similar lattice constants as the lead perovskite and suitable positions of the valence band edges open up the possibility to use them also as thin epitaxial p-type hole selective contacts in combination with the lead halogen perovskite materials. This can lead to both charge selectivity as well as to superior crystal growth of lead perovskite with less contact stress, which is interesting for further investigations.

Amer Physical Soc2016

First-principles study of defects at the SiC/SiO2 interface through hybrid functionals

Fabien Devynck

The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, and high-power applications: it has a wide band gap, high thermal conductivity, high saturated electron drift velocity, and high breakdown electric field. SiC is also hard, chemically stable, and resistant to radiation damage. Despite these desirable electronic properties, SiC-based devices are still facing many performance challenges due to the high density of defect states at the SiC/SiO2 interface. This thesis is dedicated to the first-principles study of defects at the SiC/SiO2 interface through hybrid functionals. We first generate a model structure providing a realistic description of the majority bonding arrangements at the 4H(0001)-SiC/SiO2 interface. The description of the electronic structure of the model through hybrid functionals leads to band offsets in excellent agreement with their experimental counterparts. We then study several semiconductor and oxide defects using spin-polarized hybrid density functionals and identify candidate defects responsible for the high density of interface defects measured in the 4H-SiC band gap. Finally, the possibility of growing epitaxial silicate adlayers on SiC is investigated as an alternative approach to greatly reduce the high density of defect states at the SiC/SiO2 interface.

EPFL2008

Electronic Structure and Solvation of Copper and Silver Ions: A Theoretical Picture of a Model Aqueous Redox Reaction

Leonardo Bernasconi, Ivano Tavernelli

Electronic states and solvation of Cu and Ag aqua ions are investigated by comparing the Cu2+ + e- -> Cu+ and Ag2+ + e- -> Ag+ redox reactions using d. functional-based computational methods. The coordination no. of aq. Cu2+ is found to fluctuate between 5 and 6 and reduces to 2 for Cu+, which forms a tightly bound linear dihydrate. Redn. of Ag2+ changes the coordination no. from 5 to 4. The energetics of the oxidn. reactions is analyzed by comparing vertical ionization potentials, relaxation energies, and vertical electron affinities. The model is validated by a computation of the free energy of the full redox reaction Ag2+ + Cu+ -> Ag+ + Cu2+. Investigation of the one-electron states shows that the redox active frontier orbitals are confined to the energy gap between occupied and empty states of the pure solvent and localized on the metal ion hydration complex. The effect of solvent fluctuations on the electronic states is highlighted in a computation of the UV absorption spectrum of Cu+ and Ag+. [on SciFinder (R)]

2004

Effect of metal cation replacement on the electronic structure of metalorganic halide perovskites: Replacement of lead with alkaline-earth metals

Ulf Anders Hagfeldt, Tor Jesper Jacobsson

Amer Physical Soc2016