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In this work a prototype of micro force sensor of range μN...mN is presented. Instead of the traditional piezoresistive strain sensing through thick-film resistors used for higher forces, a more effective principle is used: measurement of beam displacement ...
The endeavour to develop nanodevices demands for patterning methods in the nanometer scale. The continuous improvement in lithography methods based on deep UV (DUV), X-ray, or electron beam exposure allow for further progress in integrated circuit hardware ...
Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...
We report an all-dry, two-step, surface nanoengineering method to fabricate nanomechanical elements without photolithography. It is based on the local deposition through a nanostencil of a well-defined aluminum pattern onto a silicon/silicon-nitride substr ...
The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...
Atomic force microscopy is being increasingly used to explore the physical properties of biological structures. This technique involves the application of a force to the sample and a monitoring of the ensuing deformation process. The available experimental ...
We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have bee ...
The development of nanodevices demands for patterning methods in the nanoscale. To bring nanodevices to the market, there is a need for fast, low-cost nanopatterning methods. In addition, an increased flexibility is important for the engineering of multima ...
Accurate simultaneous measurements on the topography and electrostatic force field of 500 nm pitch interdigitated electrodes embedded in a thin SiO2 layer in a plane perpendicular to the orientation of the electrodes are shown for the first time. A static ...
Two methods to fabricate artificial nanoscale mechanical devices are presented. One is based on the combination of local Ga+ doping of silicon by a focused ion beam and KOH etching. The second is based on the use of nanostencil as miniature shadow mask to ...
