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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Publications associées (45)

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SOI digital pixel sensor based on charge pumping

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, a digital pixel sensor in silicon on insulator (SOI) is presented. The active part is a partially depleted SOI phototransistor. The technique elaborated in Harik et al. (2008) [1] was designed and implemented. Moreover, we took advantage of ...

Elsevier2010

Controlling spectral response of photodetector for an image sensor

Edoardo Charbon, Cristiano Niclass

A method for controlling the spectral response of light sensitive semiconductor elements in an array (8) using an electric control signal (Vop) applied to said semiconductor elements. The light sensitive semiconductor elements could be a single photon aval ...

2010

Measurement and performance evaluation of a silicon on insulator pixel matrix

Maher Kayal, Jean-Michel Sallese, Louis Harik

A new technique for driving silicon-on-insulator pixel matrixes has been proposed in [1], which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8×8 pixel matrix was designed and fab ...

2010

Pattern-Based Sensing with Metal−Dye Complexes: Sensor Arrays versus Dynamic Combinatorial Libraries

Kay Severin, Sébastien Rochat

The dyes Methyl Calcein Blue, Arsenazo I, and Xylenol Orange, and the metal salts CuCl2 and NiCl2 were used to generate colorimetric sensors for peptides. Two different approaches were followed: (1) Sensors based on dynamic combinatorial libraries of metal ...

American Chemical Society2010

SOI digital pixel sensor based on charge pumping

Maher Kayal, Jean-Michel Sallese, Louis Harik

Abstract-In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

2PFC™ Image Sensors: Better Image Quality at Lower Cost

Daniel Tamburrino

A modification to the standard Bayer CFA and photodiode structure for CMOS image sensors is proposed, which we call 2PFC™, meaning “Two Pixel, Full Color”. The blue and red filters of the Bayer pattern are replaced by magenta filters. Under each magenta fi ...

2009

Absolute and high precision 3 degrees of freedom position sensor

Reymond Clavel, Florent Cosandier

We present a compact 3 degrees of freedom (dof) (X-Y-θz) absolute position sensor offering a sub-micrometric resolution. The travelling range is 15x15mm2 (translations) and ±180° (rotation), with an absolute precision better than 10μm over the whole travel ...

Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa2009

Semiconductor Image Sensing

Peter Seitz, Nicolas Blanc

Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...

Springer2008

Smart camera based on embedded HW/SW coprocessor

Marco Mattavelli, Romuald Mosqueron

This paper describes an image acquisition and a processing system based on a new coprocessor architecture designed for CMOS sensor imaging. The system exploits the full potential CMOS selective access imaging technology because the coprocessor unit is inte ...

2008

Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modul ...

2008