Pixel sensor cell for cmos image sensors with enhanced conversion gain at high dynamic range capability

The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: - a photodiode (11) for generating photoelectrons; - a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured to be controlled by a first control signal (TX1); - a gain reducing capacitance (CHD) applied on the intermediate node (IN); - a second transfer transistor (14) coupling the intermediate node (IN) with a sense node (SN) and configured to be controlled by a second control signal (TX2); - an output buffer (15) coupled with the sense node (SN) and configured to amplify a potential on the sense node (SN).