Êtes-vous un étudiant de l'EPFL à la recherche d'un projet de semestre?
Travaillez avec nous sur des projets en science des données et en visualisation, et déployez votre projet sous forme d'application sur Graph Search.
Concept
Active-pixel sensor
Résumé
An active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor. CMOS sensors are used in digital camera technologies such as cell phone cameras, web cameras, most modern digital pocket cameras, most digital single-lens reflex cameras (DSLRs), mirrorless interchangeable-lens cameras (MILCs), and lensless imaging for cells.
CMOS sensors emerged as an alternative to charge-coupled device (CCD) image sensors and eventually outsold them by the mid-2000s.
The term active pixel sensor is also used to refer to the individual pixel sensor itself, as opposed to the image sensor. In this case, the image sensor is sometimes called an active pixel sensor imager, or active-pixel image sensor.
While researching metal–oxide–semiconductor (MOS) technology, Willard Boyle and George E. Smith realized that an electric charge could be stored on a tiny MOS capacitor, which became the basic building block of the charge-couple device (CCD), which they invented in 1969. An issue with CCD technology was its need for nearly perfect charge transfer in read out, which, "makes their radiation [tolerance?] 'soft', difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response."
At RCA Laboratories, a research team including Paul K. Weimer, W.S. Pike and G. Sadasiv in 1969 proposed a solid-state image sensor with scanning circuits using thin-film transistors (TFTs), with photoconductive film used for the photodetector.
Source officielle
À propos de ce résultat
Cette page est générée automatiquement et peut contenir des informations qui ne sont pas correctes, complètes, à jour ou pertinentes par rapport à votre recherche. Il en va de même pour toutes les autres pages de ce site. Veillez à vérifier les informations auprès des sources officielles de l'EPFL.