Scalable Nanowire Networks: Growth and Functionality
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Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaIn ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
The molecular-beam epitaxial growth conditions of (N + 1)(InAs)m/N(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photolumines ...
Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We presen ...
It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of InAs on GaAs(001) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delaye ...
This work shows that the critical thickness for the two-dimensional-three-dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corrobo ...
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detect ...
Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth. ...
GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy. We report the c ...
In this work, we present the Hall electrical properties for molecular beam epitaxy,grown modulation-doped field-effect transistors structures using a short-period superlattices channel of (InAs)(1.1+/-0.1) (GaAs)(n) where the indexes 1.1 and n represent th ...
