Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (epsilon(044)) and tilt of suspended monolithic silicon nanowire structures
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We propose a novel lithography method based on local deposition through miniature shadow-masks (nanostencils) for the fabrication of silicon based nanoelectronics devices. The method allows patterning of sub 100nm scale metal structures in a reproducible w ...
We describe a combination of 100-mm wafer scale deep-ultraviolet (DUV) exposure and a microelectromechanical systems (MEMS) process to fabricate silicon nitride membranes with submicrometer apertures to be used as miniature shadow masks or nanostencils. Ap ...
We describe a combination of 100-mm wafer scale deep-ultraviolet (DUV) exposure and a microelectromechanical systems (MEMS) process to fabricate silicon nitride membranes with submicrometer apertures to be used as miniature shadow masks or nanostencils. Ap ...
The endeavour to develop nanodevices demands for patterning methods in the nanometer scale. The continuous improvement in lithography methods based on deep UV (DUV), X-ray, or electron beam exposure allow for further progress in integrated circuit hardware ...
Slip markings produced on the surfaces of Ni3(Al, Ta) single crystals, plastically deformed at various temperatures in the flow stress anomaly domain, were examined by atomic force microscopy (AFM). A dominant feature is that for all investigated temperatu ...