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Characterization and Modeling of Mismatch in Cryo-CMOS

Publications associées (56)

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Mineral equilibria and thermodynamic uncertainties in the geothermometrical characterisation of carbonate geothermal systems of low temperature. The case of the Alhama-Jaraba system (Spain)

Geothermometrical characterisation of low-temperature, carbonate-evaporitic geothermal systems is usually hampered by the lack of appropriate mineral equilibria to successfully use most of the classical geothermometers and/or by the thermodynamic uncertain ...

2019

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Edoardo Charbon, Fabio Sebastiano

Cryogenic device models are essential for the reliable design of the cryo-CMOS interface that enables large-scale quantum computers. In this paper, mismatch characterization and modeling of a 40-nm bulk CMOS process over the 4.2-300 K temperature range is ...

IEEE2019

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The present disclosure concerns an excitonic device including at least one heterostructure comprising or consisting solely of a first two-dimensional material or layer and a second two-dimensional material or layer. The at least one heterostructure being c ...

2019

Fluorescent Nanodiamonds as Versatile Intracellular Temperature Sensors

Aleksandra Radenovic, Vytautas Navikas, Evgenii Glushkov

Temperature is a widely known phenomenon, which plays an extremely important role in biological systems. Its behavior on the macro-scale has been quite well investigated and understood, thanks to the availability of reliable and precise thermometers such a ...

2019

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Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion. Bipolar transistors are generally preferred over MOS transistors because of their lower spread ...

2018

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS, 2016 IEEE SENSORS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperat ...

2017

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structu ...

2016

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In this paper we present the design of a temperature compensated low-tune-voltage-sensitive CMOS ring oscillator in 40nm standard CMOS technology. The oscillator has an overall frequency range from 3.1 GHz to 3.6 GHz. The effect of temperature variations o ...

2015

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Josef Andreas Schuler, Michele Tamagnone, Wolfgang Amadeus Vitale, Antonio Paone

This work reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition in vanadium dioxide devices. The reported devices are CMOS compatible 2-terminal switches. We ...

Institute of Electrical and Electronics Engineers2015