Ligand-Modulated Excess PbI2 Nanosheets for Highly Efficient and Stable Perovskite Solar Cells

Excess lead iodide (PbI2), as a defect passivation material in perovskite films, contributes to the longer carrier lifetime and reduced halide vacancies for high-efficiency perovskite solar cells. However, the random distribution of excess PbI2 also leads to accelerated degradation of the perovskite layer. Inspired by nanocrystal synthesis, here, a universal ligand-modulation technology is developed to modulate the shape and distribution of excess PbI2 in perovskite films. By adding certain ligands, perovskite films with vertically distributed PbI2 nanosheets between the grain boundaries are successfully achieved, which reduces the nonradiative recombination and trap density of the perovskite layer. Thus, the power conversion efficiency of the modulated device increases from 20% to 22% compared to the control device. In addition, benefiting from the vertical distribution of excess PbI2 and the hydrophobic nature of the surface ligands, the modulated devices exhibit much longer stability, retaining 72% of their initial efficiency after 360 h constant illumination under maximum power point tracking measurement.

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Yi Ding, Ulf Anders Hagfeldt, Jingshan Luo, Zaiwei Wang, Zhen Yang, Chenyi Yi, Xiaoyu Zhang
WILEY-V C H VERLAG GMBH, 2020
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https://infoscience.epfl.ch/record/277189?ln=fr

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Li-TFSI is the most common p-dopant for the hole conductor spiro-MeOTAD in the normal structure (n-i-p) of perovskite solar cells (PSCs), which consistently yield the highest power conversion efficiency (PCE) albeit at the risk of lower long-term operational stability. Here we successfully replace conventional Li-TFSI with Zn-TFSI2, which not only acts as a highly effective p-dopant but also enhances considerably both the photovoltaic performance and long-term stability. The incorporation of Zn-TFSI2 as a dopant for spiro-MeOTAD leads to an increase by one order in the hole mobility compared to Li-TFSI from 3.78 x 10(-3) cm(2) V-1 s(-1) to 3.83 x 10(-2) cm(2) V-1 s(-1). Furthermore, the device with Zn-TFSI2 showed an 80 mV higher built-in voltage and a bigger recombination resistance than the one with Li-TFSI, which were responsible for the striking increase in both the open-circuit voltage and fill factor, leading to a stabilized PCE of 22.0% for the best cells. Remarkably, the device employing Zn-TFSI2 demonstrated superb photo-stability, showing even a 2% increase in the PCE after 600 h light soaking at the maximum power point (mpp) under full sun, while the PCE of the device with Li-TFSI decreased by 20% under the same conditions. Similarly, the device with Zn-TFSI2 showed better operational stability at 50 degrees C resulting in a 21% decrease in the PCE after 100 h aging at the mpp under full sun while the Li-TFSI based one showed a 55% decrease. Moreover, the Zn-TFSI2 based device was capable of effectively resisting humidity compared to the one based on Li-TFSI from shelf stability monitoring (R.H. 40%) in the dark.

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Stabilization of Highly Efficient and Stable Phase-Pure FAPbI(3)Perovskite Solar Cells by Molecularly Tailored 2D-Overlayers

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As a result of their attractive optoelectronic properties, metal halide APbI(3)perovskites employing formamidinium (FA(+)) as the A cation are the focus of research. The superior chemical and thermal stability of FA(+)cations makes alpha-FAPbI(3)more suitable for solar-cell applications than methylammonium lead iodide (MAPbI(3)). However, its spontaneous conversion into the yellow non-perovskite phase (delta-FAPbI(3)) under ambient conditions poses a serious challenge for practical applications. Herein, we report on the stabilization of the desired alpha-FAPbI(3)perovskite phase by protecting it with a two-dimensional (2D) IBA(2)FAPb(2)I(7)(IBA=iso-butylammonium overlayer, formed via stepwise annealing. The alpha-FAPbI(3)/IBA(2)FAPb(2)I(7)based perovskite solar cell (PSC) reached a high power conversion efficiency (PCE) of close to 23 %. In addition, it showed excellent operational stability, retaining around 85 % of its initial efficiency under severe combined heat and light stress, that is, simultaneous exposure with maximum power tracking to full simulated sunlight at 80 degrees C over 500 h.

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