A New Concept of Sensor for Ultra-high Levels of Radiation based on Radiation Enhanced Oxidation of Copper Thin-films

The Future Circular Collider (FCC) is the envisioned particle accelerator to be installed in the Geneva area (Switzerland). It could achieve an energy of 100 TeV by colliding proton beams (FCC-hh) travelling through a 100 km tunnel. Unprecedented radiation levels inside the FCC detectors will presumably exceed several tens of MGy with more than 10e17 particles/cm2. Current solid-state dosimetry technologies based on silicon, are not capable of withstanding such radiation, thus requiring a new type of sensor to be used as dosimeter in the future irradiation facilities and, at a later stage, in the accelerator itself. The aim of this thesis is to develop a Radiation Dependent Resistor (RDR) as novel candidate technology for ultra-high radiation monitoring, and to study the radiation effects that are responsible for the measured increase of resistance of the RDR. Following theoretical and experimental selection processes, copper was chosen as the best candidate material as thin film for the active layer of such radiation sensor. Such approach was never attempted before. The RDR was developed via four experimental phases each including: the micro-fabrication at the CMi Center of MicroNanoTechnology (EPFL), the irradiation tests with protons at the IRRAD Proton Facility (CERN) and neutrons at the TRIGA nuclear reactor (Jožef Stefan Institute), and the characterisation at CERN and EPFL. As result, the RDR was fully prototyped with an optimized process flow, a compact chip layout, a radiation hard Printed Circuit Board (PCB), and an online and remote readout system. By analyzing the electrical data and cross-sectional images of the irradiated samples, the conventional theory of high-temperature copper oxidation has proven useful in proposing a new concept of room temperature oxidation which is considerably amplified by radiation (Radiation Enhanced Oxidation). This new interpretation has been implemented in behavioural, analytical and empirical models and validated against experimental data. Through the knowledge gathered in the framework of this thesis, the RDR technology was demonstrated to be compatible with the radiation levels expected in high energy physics experiments such as the HL-LHC and FCC. Additionally, these copper RDR sensors could also be used as dosimeters in particularly radioactive environments such as nuclear and fusion reactors.

A novel approach for SPICE modeling of light and radiation effects in ICs

Chiara Rossi

Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers play an essential role, high energy ionizing particles can be a severe issue for circuits, as they create high density of excess carriers in ICs substrate, causing parasitic signals. In particular, recent advances in CMOS scaling have made circuits more sensitive to errors and dysfunctions caused by radiation-induced currents, even at the ground level. TCAD simulations of excess carriers generated by light or radiation are not dedicated to large scale circuit simulations since only few devices can be simulated at a time and computation times are too long. Conversely, SPICE simulations are faster, but their accuracy is strictly dependent on the correctness of the compact models used to describe the devices, especially when dealing with photocurrents and parasitic radiation-induced currents. The objective of this thesis is to develop a novel modeling approach for SPICE-compatible simulations of electron-hole pairs generated by light and by high energy particles. The approach proposed in this work is based on the Generalized Lumped Devices, previously developed to simulate parasitic signals in High Voltage MOSFET ICs. Here, the model is extended to include excess carriers generation. The developed approach allows physics-based simulations of semiconductor structures, hit by light or radiation, that can be run in standard circuit simulators without the need for any empirical parameter, only relying on the technological and geometrical parameters of the structure, and without any predefined compact model. The model is based on a coarse mesh of the device to obtain an equivalent network of Generalized Lumped Devices. The latter predicts generation of excess carriers and their propagation, recombination and collection at circuit nodes through the definition of equivalent voltages, proportional to the excess carrier concentrations, and equivalent currents, proportional to the excess carrier gradients. The model is validated with Sentaurus TCAD numerical simulations for different scenarios. Regarding light effects, the proposed strategy is applied to simulate various optoelectronic devices. Complete DC I-V characteristics of a solar cell and transient response of a photodiode are studied. Next, phototransistors are considered. After, a full pixel of a 3T-APS CMOS image sensor is analyzed. The photosensing device, described with Generalized Devices, is co-simulated with the in-pixel circuit, described with compact models. The impact of semiconductor parameters on pixel output and on crosstalk between adjacent pixels is predicted. Finally, radiation-induced soft errors in ICs are examined. Alpha particles at different energies hitting the substrate are simulated. Parasitic currents collected at contacts are studied as a function of particles position and energy. Funneling effect, which is a phenomenon specific to high injection, is also included in the model. This work shows that the Generalized Lumped Devices approach can be successfully used for SPICE simulations of optoelectronic devices and for prediction of radiation- induced parasitic currents in ICs substrate. This thesis is a first step towards a complete and flexible tool for excess carriers modeling in standard circuit simulators.

EPFL2021

New Capabilities of the FLUKA Multi-Purpose Code

Francesco Cerutti, Nikolaos Charitonidis, André Donadon Servelle, Philippe Jean Schoofs

FLUKA is a general purpose Monte Carlo code able to describe the transport and interaction of any particle and nucleus type in complex geometries over an energy range extending from thermal neutrons to ultrarelativistic hadron collisions. It has many different applications in accelerator design, detector studies, dosimetry, radiation protection, medical physics, and space research. In 2019, CERN and INFN, as FLUKA copyright holders, together decided to end their formal collaboration framework, allowing them henceforth to pursue different pathways aimed at meeting the evolving requirements of the FLUKA user community, and at ensuring the long term sustainability of the code. To this end, CERN set up the FLUKA.CERN Collaboration (1) . This paper illustrates the physics processes that have been newly released or are currently implemented in the code distributed by the FLUKA.CERN Collaboration (2) under new licensing conditions that are meant to further facilitate access to the code, as well as intercomparisons. The description of coherent effects experienced by high energy hadron beams in crystal devices, relevant to promising beam manipulation techniques, and the charged particle tracking in vacuum regions subject to an electric field, overcoming a former lack, have already been made available to the users. Other features, namely the different kinds of low energy deuteron interactions as well as the synchrotron radiation emission in the course of charged particle transport in vacuum regions subject to magnetic fields, are currently undergoing systematic testing and benchmarking prior to release. FLUKA is widely used to evaluate radiobiological effects, with the powerful support of the Flair graphical interface, whose new generation (Available at http://flair.cem) offers now additional capabilities, e.g., advanced 3D visualization with photorealistic rendering and support for industry-standard volume visualization of medical phantoms. FLUKA has also been playing an extensive role in the characterization of radiation environments in which electronics operate. In parallel, it has been used to evaluate the response of electronics to a variety of conditions not included in radiation testing guidelines and standards for space and accelerators, and not accessible through conventional ground level testing. Instructive results have been obtained from Single Event Effects (SEE) simulations and benchmarks, when possible, for various radiation types and energies. The code has reached a high level of maturity, from which the FLUKA.CERN Collaboration is planning a substantial evolution of its present architecture. Moving towards a modern programming language allows to overcome fundamental constraints that limited development options. Our long term goal, in addition to improving and extending its physics performances with even more rigorous scientific oversight, is to modernize its structure to integrate independent contributions more easily and to formalize quality assurance through state-of-the-art software deployment techniques. This includes a continuous integration pipeline to automatically validate the codebase as well as automatic processing and analysis of a tailored physics-case test suite. With regard to the aforementioned objectives, several paths are currently envisaged, like finding synergies with Geant4, both at the core structure and interface level, this way offering the user the possibility to run with the same input different Monte Carlo codes and crosscheck the results.

FRONTIERS MEDIA SA2022

Génération de deuxième et troisième harmonique avec un laser Nd:YAG en régime pulsé libre

Sébastian Favre

Industrial laser precision machining is predominately based on pulsed Nd:YAG lasers operated at a wavelength of 1.06 µm in a free running pulse regime. The objective of this thesis work has been to investigate second and third harmonic generation for such "long pulse" Nd:YAG lasers. Visible and UV radiation can be better focused. The absorption coefficient at these wavelengths is higher in most materials. Processing at the doubled or tripled frequency increases machining precision and allows processing of new classes of materials such as, e.g., high reflective metals or ceramics. Frequency doubling and tripling of Q-switched, modelocked, or CW operated Nd:YAG lasers has been the subject of numerous publications. However, the particular problems associated with the free running pulse regime have not yet been addressed. The generation of harmonics requires a laser source that can deliver radiation with high brightness. A system based on a slab crystal with a beam quality factor of M2 ≈ 1.6 and a power of up to 1.5 kW has been used in the experiments. An external electro-optical switch has been implemented in order to precisely control the laser pulse shape and duration. The non-linear coefficient and the angular acceptance have been the main criteria for selecting LBO (LiB3O5), KTP (KTiOPO4), and MgO:LiNbO3 for the frequency conversion experiments. The conversion efficiency has been measured for these crystals as a function of the intensity at the fundamental wavelength. In contrast to simple model predictions, the efficiency does not increase linearly with intensity under long pulse conditions. An intensity dependant phase mismatch is at the origin of the deviations. A heuristic model for the efficiency prediction has been developed. It is based on a linear increase of phase mismatch with intensity and it allows describing the experimental findings with sufficient accuracy. The conversion efficiency for frequency doubling is limited to about 20% at pulse durations of 100 µsec. It decreases with increasing pulse duration. Catastrophic thermal damage is at the origin of the limitation in this pulse regime. Our experiments indicate that the damage is initiated by the frequency doubled light. Temporary color centers are created in the presence of the second harmonic light. The dynamic of the creation and annihilation of these centers has been investigated. It could be shown that finally the absorption of the fundamental harmonic (infrared) radiation at these centers results in irreversible thermal damages. A power of 140 W in the second harmonic (178 MW/cm2 on a waist of 5 µm) and 12 W in the third harmonic (61 MW/cm2 in a waist of 2.5 µm) was obtained with pulses of 200 µs. This allowed to demonstrate the feasibility of material processing with very high reproducibility and definition, which for instance allowed the design and the manufacturing of micro-grippers and several other prototypes in the field of robotics and micro-engineering.

EPFL2001