Optical parametric gain in CMOS-compatible sub-100 mu m photonic crystal waveguides

Emerging compositionally engineered complementary metal-oxide-semiconductor (CMOS)-compatible platforms have been employed for high efficiencies in various on-chip applications, including optical parametric amplification and wavelength conversion. Combining the novel nonlinear optics platforms such as ultra-silicon-rich nitride (USRN: Si7N3) with periodic waveguide structures can lead to further enhancement of material nonlinearities via the slow light effect and enable ultra-compact devices. Four-wave mixing in a USRN-based, CMOS-compatible, photonic crystal waveguide (PhCWg) leading to on/off optical parametric signal gain reaching 3 dB, and a large instantaneous idler conversion efficiency of -1 dB is explored experimentally. Enhancement of Kerr nonlinearity in the presence of a sizable and near-constant group index allows the findings on an ultra-compact, 97 mu m-long PhCWg, equivalent to a large on/off gain per unit length of 333 dB/cm. (C) 2020 Author(s).

Integrated Gallium Phosphide Photonics

Katharina Schmeing

The integration of new materials mediating light-matter interaction in nanoscale devices is a persistent goal in nanophotonics. One of these materials is Gallium phosphide, which offers an attractive combination of a high refractive index (n=3.05 at a wavelength of 1550 nm) and a large bandgap (Eg =2.26 eV), enabling photonic devices with strongly confined light fields, not suffering from heating due to two-photon absorption at telecommunication wavelengths. Furthermore, due to its non-centrosymmetric crystal structure, it has a non-vanishing second-order susceptibility and is piezoelectric. Related to its large refractive index is a high third-order susceptibility. Prior to this work the use of GaP for photonic devices was limited to individual non-integrated components, as GaP was not available on a substrate with substantially lower refractive index equivalent to SOI-wafers for silicon. In this work a process was developed that allows the integration of GaP devices onto SiO2. It exploits direct wafer bonding of a GaP/AlxGa1-xP/GaP heterostructure onto a SiO2-on-Si wafer. After substrate removal, photonic devices are patterned by dry-etching in the top GaP device layer. The GaP devices investigated here are used to explore nonlinear optics and optomechanics. In the area of nonlinear optics, second- and third-harmonic generation are observed. The Kerr coefficient is experimentally estimated as n2[1550nm] = 1.2(5)x10^17m^2/W, for the first time in a precision measurement at telecommunication wavelengths. Four-wave mixing is used for broadband frequency comb generation, where a power threshold as low as 3 mW is obtained. The combination of four-wave mixing and second-harmonic generation leads to frequency-doubled combs. The optomechanical properties of GaP one-dimensional photonic crystal cavities are optimized by simulations and fabricated devices are characterized. Optical quality factors of Qo>10^5 and optomechanical coupling strengths of g0/2pi=400 kHz are measured. Dynamical backaction in the form of the spring effect and the parametric amplification are observed, as well as optomechanically induced transparency and absorption. A device design for a microwave-to-optical transducer is developed, relying on the piezoelectricity of GaP. It combines electromechanical and optomechanical transduction. The predicted electromechanical coupling strength is in the MHz range. Furthermore, photonic crystal cavity designs containing a slot at the center of the cavity are studied. According to simulations for slot widths below 30 nm, optomechanical coupling strengths g0/2pi>1 MHz could be achieved. Fabricated silicon photonic crystal cavities show high quality factors of Qo=8x10^4 while hosting a mechanical eigenmode with a frequency of 2.7 GHz. Because of process technology limitations, only slot widths as narrow as 40 nm can be fabricated, the achieved g0/2pi is limited to 300 kHz. The new GaP-on-insulator material platform opens the door to integrated GaP devices. Frequency combs are of interest for soliton comb formation, mid-IR frequency combs, and ultra-broadband supercontinuum generation. Microwave-to-optical transducers are on the one hand desired for quantum information processing, on the other hand they are applicable as efficient modulators or detectors for classical signals.

EPFL2019

Dispersion Properties of Photonic Crystals and Silicon Nanostructures Investigated by Fourier-Space Imaging

Jana Jágerská

State-of-the-art nanophotonic devices based on semiconductor technology use total internal reflection or the photonic bandgap effect to reduce the waveguide core dimensions down to hundreds of nanometers, ensuring strong optical confinement within the scale of the wavelength. Within the framework of this thesis, we investigate the light propagation in such devices by direct experimental reconstruction of their dispersion relation ω (k), where ω is the optical frequency and k the wave vector of the supported modes. Knowledge of the dispersion relation provides us with comprehensive information about the guided field, including the number of supported modes, their phase and group velocity as well as the higher order dispersion. As a principal characterization tool, an original experimental technique referred as Fourier-space imaging is used. It is based on far-field analysis of optical signal radiated out of the plane of the structure, which makes it possible to retrieve accurately, non-invasively and in one step the complex dispersion of both the leaky and the truly guided optical modes. The latter is feasible provided that the device is equipped with vanishingly weak grating probes that scatter a small part of the guided light into the light cone. The Fourier-space imaging technique was applied to study the optical properties of a large number of nanophotonic devices, ranging from simple nanowire waveguides to complex photonic crystal structures. In the first part of the work, silicon-on-insulator slot waveguides, coupled ridge waveguides and nanowire waveguide arrays are addressed. Besides the phase and group index dispersion, we investigate the phenomenon of mode splitting in coupled systems, being able to probe the coupling lengths with an accuracy of ±50 nm. In the case of waveguide arrays, beam steering using both thermo-optic effect and wavelength tuning was demonstrated. Concerning the photonic crystal devices, we primarily focus on the phenomenon of slow light propagation in line-defect and coupled-cavity photonic crystal waveguides. The latter represent a special type of a waveguide, which allows for substantial optical signal retardation by evanescent coupling along a chain of photonic crystal cavities. The main motivation was to accurately measure the group index of the slow light modes and recognize the main factors limiting its maximum achievable value. Among others, experimental observation of dispersion curve renormalization, enhanced out-of-plane and back-scattering as well as light localization due to residual disorder were reported. Finally, a detailed experimental study of hollow-core photonic crystal structures intended for optical sensing applications is presented.

EPFL2011

Mid-infrared continuous-wave parametric amplification in chalcogenide microstructured fibers

Camille Sophie Brès, Davide Grassani, Svyatoslav Kharitonov, Sida Xing

The persistent growth of interest in the middle infrared (MIR) is stimulating the development of sources and components. Novel waveguides and fibers for the efficient use of nonlinear effects in the MIR are being intensively studied. Highly nonlinear silica fibers have enabled record performances of highly versatile parametric processes in the telecommunication band. However, no waveguiding platforms (to our knowledge) have yet solved the trade-off among high nonlinearity, low propagation losses and dispersion in the MIR. As single waveguide designs have not yet hit this particular optimal point, only pulsed–pumped demonstrations have been carried out, hindering any application requiring narrow linewidth, continuous-wave (c.w.) operation, or signal modulation. Here, we show MIR c.w. parametric amplification in a Ge10As22Se68 tapered fiber. Leveraging state-of-the-art fabrication techniques, we use a photonic crystal fiber (PCF) geometry combining high nonlinearity and low dispersion, while maintaining single mode and low losses in the short-wave IR and MIR. We experimentally demonstrate 5 dB signal amplification and 3 dB idler conversion efficiency using only 125 mW of pump in the 2 μm wavelength range. Our result is not only the first c.w. parametric amplification measured at 2 μm in any waveguide, but it also establishes GeAsSe PCF tapers as the most promising all-fibered, high-efficiency parametric converter for advanced applications in the MIR. © 2017 Optical Society of America