Publication

Time-of-flight device and 3d optical detector

Publications associées (41)

Status of the K-EUSO Orbital Detector of Ultra-High Energy Cosmic Rays

K-EUSO (KLYPVE-EUSO) is a planned orbital mission aimed at studying ultra-high energy cosmic rays (UHECRs) by detecting fluorescence and Cherenkov light emitted by extensive air showers in the nocturnal atmosphere of Earth in the ultraviolet (UV) range. Th ...

MDPI2022

A novel approach for SPICE modeling of light and radiation effects in ICs

Chiara Rossi

Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...

EPFL2021

CMOS-Based Readout and Control Electronics for Microgrippers

Marco Mattavelli, Diego Ruben Barrettino

This paper presents the design of an application-specific integrated circuit (ASIC) with all the necessary electronic blocks to read out and control Conjugate Surfaces Flexure Hinge (CSFH) microgrippers. The ASIC was fabricated using a high-voltage 0.35 mu ...

IEEE2020

Flexible Single-Photon Image Sensors, CMOS Circuits for Biological Sensing and Processing

Edoardo Charbon

Photon-counting imaging technology has applications in many fields such as fluorescence lifetime imaging microscopy (FLIM), time-resolved Raman spectroscopy, 3D imaging, and even space communications. The requirement to detect single photons with picosecon ...

Springer International Publishing2018

Circuit Designs of High-Performance and Low-Power RRAM-Based Multiplexers Based on 4T(ransistor)1R(RAM) Programming Structure

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Edouard Giacomin

Routing multiplexers based on pass-transistors or transmission gates are an essential components in many digital integrated circuits. However, whatever structure is employed, CMOS multiplexers have two major limitations: 1) their delay is linearly related ...

Ieee-Inst Electrical Electronics Engineers Inc2017

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Denis Sallin

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

EPFL2016

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon ...

EPFL2016

An integrated interface for peripheral neural system recording and stimulation: system design, electrical tests and in-vivo results

Stanisa Raspopovic, Roberto Puddu

The prototype of an electronic bi-directional interface between the Peripheral Nervous System (PNS) and a neuro-controlled hand prosthesis is presented. The system is composed of 2 integrated circuits: a standard CMOS device for neural recording and a HVCM ...

Springer Verlag2016

Ultra Low Noise CMOS Image Sensors

Assim Boukhayma

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image ...

EPFL2016

Compressive image acquisition in modern CMOS IC design

Pierre Vandergheynst, Alexandre Schmid, Yusuf Leblebici, Mahdad Hosseini Kamal, Nikola Katic

Compressive sampling (CS) offers bandwidth, power, and memory size reduction compared to conventional (Nyquist) sampling. These are very attractive features for the design of modern complementary metal-oxide semiconductor (CMOS) image sensors, cameras, and ...

Wiley-Blackwell2015

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