Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
Publications associées (32)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in ...
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
Using blocking capacitors in biomedical stimulators is important to the safety of the developed systems. However, the capacitors should be large enough in order to minimize the required voltage headroom. On the other hand, integrating large capacitors of f ...
Among different analog-to-digital converter (ADC) architectures pipelined ADCs are the most suited for medium sampling frequencies (50-300MSPS) and medium resolutions, i.e. 8 to 14 bits. Having the lowest figure-of-merit (FOM) in its bandwidth and resoluti ...
The effect of varying the thickness of Pt top electrodes made by the electron beam induced deposition technique on the domain nucleation characteristics of Pb(Zr,Ti)O-3 films has been investigated by piezoresponse force microscopy. The advantage of this ex ...
An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alt ...
Institute of Electrical and Electronics Engineers2013
An adaptive system for the suppression of vibration transmission using a single piezoelectric actuator shunted by a negative capacitance circuit is presented. It is known that by using a negative-capacitance shunt, the spring constant of a piezoelectric ac ...
Owing to its peculiar energy dispersion, the quantum capacitance property of graphene can be exploited in a two- dimensional layered capacitor configuration. Using graphene and boron nitride, respectively, as the electrodes and the insulating dielectric, a ...
During the design phase of a modular multilevel converter (MMC), an accurate loss evaluation of the submodule (SM) plays an important role. In this paper, a method based on the analytical description of the MMC key waveforms that allows to directly obtain ...
Institute of Electrical and Electronics Engineers2017
The dielectric, electrical and structural properties of (1-x) (0.94Bi(1/2)Na(1/2)TiO(3)-0.06BaTiO(3))-xK(0.5)Na(0.5)NbO(3) (BNT-BT-xKNN) with x=0.09, 0.12, 0.15, and 0.18 were investigated as potential candidates for high-temperature capacitors with a work ...