Dust particle diagnostics in rf plasma deposition of silicon and silicon oxide films
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Stable negative ions containing up to sixteen silicon atoms have been measured by mass spectrometry in RF power-modulated silane plasmas for amorphous silicon deposition. These hydrogenated silicon cluster ions reach much higher masses than the positive io ...
Intrinsic stress measurements were carried out on hydrogenated amorphous silicon (a-Si:H) films deposited with different excitation frequencies (13.56-70 MHz), by plasma-enhanced chemical vapor deposition. It was observed that films deposited at 70 MHz hav ...
It is now generally recognized that the excitation frequency is an important parameter in radio-frequency (rf) plasma-assisted deposition. Very-high-frequency (VHF) silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films ...
Particulate contamination produced during plasma-assisted deposition of amorphous silicon devices can be responsible for reduced quality and yield. The threshold for powder formation imposes an upper limit on the radio frequency (rf) power and hence the de ...
Hydrogenated amorphous silicon has been prepared at a plasma excitation frequency in the very-high-frequency band at 70 MHz with the glow discharge technique at substrate temperatures between 280 and 50-degrees-C. The structural properties have been studie ...