Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Perhaps the largest challenge for our global society is to find ways to replace the slowly but inevitably vanishing fossil fuel supplies by renewable resources and, at the same time, avoid negative effects from the current energy system on climate, environ ...
This thesis investigates amorphous (a-Si:H) and microcrystalline (μc-Si:H) solar cells deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) in the n-i-p or substrate configuration. It focuses on processes that allow the us ...
We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorpor ...
Dye-sensitized solar cells (DSCs) are one of the most promising environmental friendly and low material costs photovoltaic devices. DSCs accomplish the separation of the optical absorption and charge separation processes by the association of a sensitizer ...
Dye-sensitized solar cells (DSCs) constitute a novel class of hybrid organic-inorganic solar cells. At the heart of the device is a mesoporous film of titanium dioxide (TiO2) nanoparticles, which are coated with a monolayer of dye sensitive to the visible ...
InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the face ...
GaN films epitaxially-grown on M-sapphire may have different orientations, either nonpolar and semipolar. In this paper, the different epitaxial relationships are investigated in details thanks to transmission electron microscopy. It is shown that these re ...
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm ...
The growth of GaAs nanowires by the gallium-assisted method with molecular beam epitaxy (MBE) is presented in this review article. The structure of the grown nanowires was investigated by means of scanning and transmission electron microscopy as well as Ra ...
Although in principle very promising, photovoltaic technology has so far failed to deliver robust high efficiency modules at affordable prices. Despite considerable research, high efficiency silicon based cells remain expensive, while the more recent organ ...
